高等学校化学学报

高等学校化学学报 ›› 2001, Vol. 22 ›› Issue (10): 1703.

• 研究论文 • 上一篇    下一篇

Gd2CuO4薄膜与Si,SiO2/Si基底界面相互作用研究

张英侠1,2, 朱永法1, 姚文清1, 曹立礼1   

  1. 1. 清华大学化学系, 北京 100084;
    2. 中国农业大学化学系, 北京 100094
  • 收稿日期:2000-07-07 出版日期:2001-10-24 发布日期:2001-10-24
  • 通讯作者: 朱永法(1964年出生),男,博士,副教授,从事表面化学、薄膜材料以及光化学催化等方面的研究.E-mail:zhyf@chem.tsinghua.edu.cn E-mail:zhyf@chem.tsinghua.edu.cn
  • 基金资助:

    清华大学测试基金资助

A Study of the Interface Action Between Gd2CuO4 Layer and Si, SiO2/Si Substrate

ZHANG Ying-Xia1,2, ZHU Yong-Fa1, YAO Wen-Qing1, CAO Li-Li1   

  1. 1. Department of Chemistry, Tsinghua University, Beijing 100084, China;
    2. Department of Chemistry, China Agricultural University, Beijing 100094, China
  • Received:2000-07-07 Online:2001-10-24 Published:2001-10-24

PDF (PC)

摘要： 采用XRD和俄歇电子能谱(AES)等技术研究了钙钛矿型Gd2CuO4薄膜与基底Si和SiO2/Si的界面相互作用,发现衬底对Gd2CuO4薄膜的晶化特性有很大影响.以单晶Si为基底时,Gd2CuO4薄膜经600℃热处理1H即可形成钙钛矿型晶体结构,而以SiO2/Si为基底时,经700℃热处理1H才能形成较完善的钙钛矿型晶体结构.Gd2CuO4薄膜的晶粒度随热处理温度的升高而增大,热处理时间对晶粒度则影响较小.AES深度剖析表明,形成的薄膜组成均匀,在界面上有一定程度的扩散.以Si为基底时,Gd2CuO4与基底Si相互扩散,以SiO2/Si为基底时则主要是薄膜中Gd,Cu向SiO2层中的扩散.AES线性分析表明,在薄膜与基底的界面上,各元素的俄歇电子动能发生位移,表明基底作用使界面上元素的化学环境发生了变化.

关键词: Gd2CuO4薄膜, 晶化, 界面, 扩散, AES

Abstract: Gd2CuO4 film was deposited on Si and SiO2/Si wafer by using amorphous heteronuclear complex as a precursor. XRDindicated that Gd2CuO4 film with a perovskite structure could be formed on single crystal Si substrate at 600 ℃ foR1 h and on SiO2/Si substrate at 700 ℃ foR1 h. The crystalline size of the Gd2CuO4 film on Si wafer increased from 17 to 21 nm with the calcination temperature increasing from 600 to 800 ℃ foR1 h. The calcination time had less effect on the crystalline size. The crystallization temperature of Gd2CuO4/SiO2/Si was higher than that of Gd2CuO4/Si sample due to the interface diffusion. The interface diffusion between Gd2CuO4 film and Si substrate had taken place and the interface species were Gd2O3, CuO, SiOand Si. The interface diffusion between Gd2CuO4 film and SiO2/Si substrate was much serious than that of Gd2CuO4/Si sample. Gd and Cu diffused into SiO2 layer and existed in Gd2O3 and CuOsimple oxides.

Key words: Gd2CuO4 film, Crystallization, Interface, Diffusion, AES

中图分类号: 

TrendMD: