Organic Phototransistor Based on Surface Plasmon Resonance Effect†

doi:10.7503/cjcu20170377

Abstract

Abstract:

Photoresponsive organic field-effect transistors(PhotOFET) require materials with high mobility, high absorbance and high exciton dissociation efficiency. Although great efforts have been made to realize high performance PhotOFET using various organic small molecules and polymeric semiconductors, both the responsivity and mobility were still low based on pristine materials. In this work, gold nanoparticles(Au NPs) were incorporated into the semiconductor layer of OFET. Owing to the surface plasmon effect of the Au NPs, the absorbance of the semiconductor could be greatly increased and high-performance PhotOFET were realized. Au NPs were prepared in situ on the substrates and used to fabricate PhotOFET directly. By utilizing the surface plasmon resonance effect of the Au NPs, high performance PhotOFET with a mobility of 0.12 cm²·V^-1·s^-1 and a responsivity of 11.6 A/W was obtained based on the materials without photoresponse in the visible spectrum. The surface chemical modification of gold nanoparticles with alkane thiol played a key role in improving the device performance. The device structure proposed here, i. e. the incorporation of Au NPs into the semiconductor layer of OFETs, provided an effective method for the construction of high performance PhotOFET based on common organic semiconductors.

Key words: Gold nanoparticles, Surface plasma resonance, Organic phototransistor, Photoresponse

CLC Number:

O649

TrendMD:

ZHANG Chanchan, ZHANG Fanghui, DING Lei, NI Zhenjie, JIANG Lang, DONG Huanli, ZHANG Xiaotao, LI Rongjin, HU Wenping. Organic Phototransistor Based on Surface Plasmon Resonance Effect^†[J]. Chem. J. Chinese Universities, 2018, 39(1): 102.

Figures/Tables 11

Fig.1 Chemical structure of IIDDT

Fig.2 AFM image(A) and diameter distribution(B) of the Au nanoparticles

Fig.3 AFM images of IIDDT films spin-coated by trichloroethylene solution(4 mg/mL)(A) Unannealed; (B) annealed.

Fig.4 AFM images of the IIDDT films spin-coated with Au NPs(A), C6 SAM-Au NPs(B), C8 SAM-Au NPs(C) and C11 SAM-Au NPs(D)

Fig.5 X-ray diffraction patterns of the IIDDT film(a), Au nanoparticles(b) and IIDDT film with Au nanoparticles(c)

Fig.6 Schematic structure of OFET device(A), transfer(B) and output(C) characteristics of OFET with IIDDT as the semiconductorVG/V: a. -10; b. -20; c. -30; d. -40; e. -50; f. -60.

Fig.7 Schematic diagram of PhotOFET with Au NPs(A) and transfer curves of PhotOFET under white light irradiation(80 μW/cm2) with different semiconductor layers(B)a. C6 SAM-Au NPs; b. C8 SAM-Au NPs; c. C11 SAM-Au NPs; d. Au NPs.

Fig.8 Transfer(A) and output characteristics of PhotOFET with C6 SAM-Au NPs in the dark(B) and under white light irradiation with 80 μW/cm2(C)VG/V: a. -20; b. -30; c. -40; d. -50; e. -60; f. -70; g. -80.

Table 1 PhotOFETs property based on polymer semiconductors

Semiconductor	Structure (Dielectric)	Mobility/ (cm²·V^-1·s^-1)	Responsivity/ (A·W^-1)	Intensity/ (mW·cm^-2)	I_d,ph/I_d,dark	Ref.
P3OT	BG/TC(PVA)	10^-3—10^-4	1	1	10²—10³	[9]
P3HT	BG/TC(PVA)	2.6×10^-3	NA^*	1	NA^*	[10]
F8T2	BG/BC(SiO₂)	1.2×10^-4	18.5	1	ca. 10²	[15]
TA-PPE	BG/TC(SiO₂)	NA	0.036	1	3.3×10³	[17]
IIDDT	BG/TC(SiO₂)	0.12	11.6	0.08	700	This work

Fig.9 Photoswitch properties(A) and photocurrent change(B) of the PhotOFETa. IIDDT; b. bare-Au NPs; c. C11 SAM-Au NPs; d. C8 SAM-Au NPs; e. C6 SAM-Au NPs.

Fig.10 UV-Vis absorption spectra at different semiconductor layersa. IIDDT; b. Au NPs; c. Au NPs-IIDDT; d. C6 SAM-Au NPs; e. C8 SAM-Au NPs; f. C11 SAM-Au NPs.

References 28

[1]	Narayan K. S., Kumar N., Appl. Phys. Lett., 2001, 79(12), 1891—1893
[2]	Arias A. C., Mackenzie J. D., Mcculloch I., Rivnay J., Salleo A., Chem. Rev., 2010, 110(1), 3—24
[3]	Lei T., Wang J. Y., Pei J., Acc. Chem. Res., 2014, 47(4), 1117—1126
[4]	Reichmanis E., Katz H., Kloc C., Maliakal A., Bell Labs Tech. J., 2005, 10(3), 8—105
[5]	Facchetti A., Yoon M. H., Marks T., Adv. Mater., 2010, 17(14), 1705—1725
[6]	Yang F., Shtein M., Forrest S. R., Nature, 2004, 428(6986), 911—918
[7]	Wang C., Dong H., Hu W., Liu Y., Zhu D., Chem. Rev., 2012, 112(4), 2208—2267
[8]	Li R., Hu W., Liu Y., Zhu D., Acc. Chem. Res., 2010, 43(4), 529—54
[9]	Marjanovic N., Photoresponsive Organic Field Effect Transistor, VDM Verlag Dr. Müller Aktiengesellschaft & Co. KG, Austria, 2008, 383—475
[10]	Ma X. Y., Yang J. M., Cai W. S., Zhu G. D., Liu J. Y., Chem. Res. Chinese Universities, 2016, 32(4), 702—708
[11]	Narayan K. S., Kumar N., Appl. Phys. Lett., 2001, 79(12), 1891—1893
[12]	Dutta S., Narayan K. S., Synth. Met., 2004, 146(3), 321—324
[13]	Tanusri P., Arif M., Saiful I. K., Nanotechnology, 2010, 21(32), 325201—325205
[14]	Wasapinyokul K., Milne W. I., Chu D. P., J. Appl. Phys., 2009, 105(2), 024509—024517
[15]	Hamilton M. C., Kanicki J., IEEE J. Sel. Top. Quant., 2004, 10(4), 840—848
[16]	Hamilton M. C., Martin S., Kanicki J., IEEE T. Electron. Dev., 2004, 51(6), 877—885
[17]	Wang X., Wasapinyokul K., Tan W. D., Rawcliffe R., Campbell A. J., Bradley D. D. C., J. Appl. Phys., 2010, 107(2), 599—602
[18]	Xu Y., Berger P. R., Wilson J. N., Bunz U. H. F., Appl. Phys. Lett., 2004, 85(18), 4219—4221
[19]	Dong H., Li H., Wang E., Nakashima H., Torimitsu K., Hu W., J. Phys. Chem. C, 2010, 112(49), 19690—19693
[20]	Zakaria R., Lin W. K., Lim C. C., Appl. Phys. Exp., 2012, 5(8), 082002—082005
[21]	Liu Y., Cheng R., Liao L., Zhou H. L., Bai J. W., Liu G., Liu L. X., Huang Y., Duan X. F., Nat. Commun., 2011, 2(1), 579—583
[22]	Green M. A., Pillai S., Nat. Photon, 2012, 6(3), 130—132
[23]	Ferry V. E., Munday J. N., Atwater H. A., Adv. Mater., 2010, 22(43), 4794—4808
[24]	Atwater H. A., Polman A., Nat. Mater., 2010, 9(3), 205—213
[25]	Wu X. L., Liu L. L., Xie Z. Q., Ma Y. G., Chem. J. Chinese Universities, 2016, 37(3), 409—425
	(吴小龑, 刘琳琳, 解增旗, 马於光.高等学校化学学报, 2016, 37(3), 409—425)
[26]	Lei T., Cao Y., Fan Y. L., Liu C. J., Yuan S. C., Pei J., J. Am. Chem. Soc., 2011, 133(16), 6099—6101
[27]	Feng H. Y., Gao L., Ye X. H., Wang L., Xue Z. C., Kong J. M., Li L. Z., Chem. Res. Chinese Universities, 2017, 33(2), 155—159
[28]	Green M. A., Pillai S., Nat. Photon., 2012, 6(3), 130—132