高等学校化学学报

高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (12): 2349.

• 研究论文 • 上一篇    下一篇

InAs量子点光致发光效率的研究

杨景海1,2, 宫杰3,2, 刘伟1, 范厚刚2, 杨丽丽2, 赵庆祥4   

  1. 1. 吉林大学材料科学与工程学院, 长春130023;
    2. 吉林师范大学凝聚态物理研究所, 四平136000;
    3. 长春大学应用理学院, 长春130022;
    4. 查尔摩斯技术大学光电物理所, 瑞典哥德堡S-41296
  • 收稿日期:2003-11-12 出版日期:2004-12-24 发布日期:2004-12-24
  • 基金资助:

    吉林省科技发展计划项目(批准号:20020615)资助

Photoluminescence Efficiency from InAs Quantum Dots

YANG Jing-Hai1,2, GONG Jie3,2, LIU Wei1, FAN Hou-Gang2, YANG Li-Li2, ZHAO Qing-Xiang4   

  1. 1. College of Materials Science and Engineering, Jilin University, Changchun 130023, China;
    2. The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, China;
    3. Applied Science College, Changchun University, Changchun 130022, China;
    4. Institute of Optical-electric Physics, Chalmers University of Technology, Gteborg SE-412 96, Sweden
  • Received:2003-11-12 Online:2004-12-24 Published:2004-12-24

PDF (PC)

被引次数

5

摘要： 利用分子束外延技术制得InAs量子点样品,采用分光光度法对样品的光致发光效率进行研究.发现在InAs层和GaAs覆盖层之间插入隧道阻挡层,当激发功率密度为60W/cm2时,InAs量子点发射强度的增加量超过一个数量级.这种光复合效率的增强是由于浸润层中的非辐射跃迁受到了抑制所致.

关键词: InAs, 量子点, 光致发光效率

Abstract: InAs quantum dots(QDs) were investigated by using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm2. The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure.

Key words: InAs, Quantum dots, Photoluminescence efficiency

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