高等学校化学学报 ›› 2021, Vol. 42 ›› Issue (2): 504-522.doi: 10.7503/cjcu20200518

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二维过渡金属硫属化合物的大面积制备与应用研究进展

杨鹏飞,石雨萍,张艳锋   

  1. 1.北京大学前沿交叉学科研究院
    2.工学院材料科学与工程系, 北京 100871
  • 收稿日期:2020-08-03 出版日期:2021-02-10 发布日期:2020-12-28
  • 基金资助:
    国家重点研发计划项目(2018YFA0703700);国家自然科学基金(批准号(51991344);51991340, 51925201, 51861135201)和北京市自然科学基金(2192021)

Large-scale Syntheses and Versatile Applications of Two-dimensional Metal Dichalcogenides

YANG Pengfei1,2, SHI Yuping1,2, ZHANG Yanfeng1,2   

  1. 1.Academy for Advanced Interdisciplinary Studies
    2.Department of Materials Science and Engineering,College of Engineering,Peking University,Beijing 100871,China
  • Received:2020-08-03 Online:2021-02-10 Published:2020-12-28
  • Supported by:
    the National Key Research and Development Program of China(2018YFA0703700);the National Natural Science Foundation of China(51991344);the Beijing Natural Science Foundation, China(2192021)

摘要:

二维过渡金属硫属化合物(TMDs)因具有可调带隙、 谷电子学性质和高催化活性等优点, 在电子学、 光电子学和能源相关领域受到广泛关注. 为了实现以上应用, 实现大面积、 厚度均匀TMDs薄膜的批量制备至关重要. 化学气相沉积法(CVD)是制备大面积均匀、 高质量二维材料普遍使用的方法. 本文从前驱体的供给和衬底的设计两个角度, 总结了目前合成大面积TMDs薄膜的CVD方法, 并讨论了高质量TMDs的生长机制和参数优化方法; 介绍了高质量TMDs在电子学、 光电子学和电/光催化等方面的应用; 讨论了目前合成大面积均匀、 高质量TMDs所面临的挑战, 并对该领域的发展方向进行了展望.

关键词: 过渡金属硫属化合物, 化学气相沉积, 大面积, 电化学

Abstract:

Recently, two-dimensional(2D) transition metal dichalcogenides(TMDs) have attracted significant attentions due to their intriguing properties, such as tunable bandgaps, valley related physics and high catalytic activity, which endow them promising applications in electronics, optoelectronics and energy related fields. To promote these applications, the batch production of large-scale and thickness-uniform TMDs films is an essential issue. Chemical vapor deposition(CVD) has been proved to be a facile route for the syntheses of large-area uniform high-quality 2D materials. This topical review hereby focuses on the introduction of the state-of-the-art CVD methods for the large-scale syntheses of TMDs films through two key strategies, from the viewpoints of precursor delivery design and substrate engineering. The related mechanisms and specific parameter optimizations towards high-quality growth are also discussed. In addition, the applications of the CVD derived high-quality TMDs in electronics, optoelectronics, electro-/photo-catalysis are also introduced. Finally, the current challenges for the syntheses of large-area uniform and high-quality TMDs are proposed, and the future directions in these developing fields are also forecasted.

Key words: Transition metal dichalcogenide, Chemical vapor deposition, Large area, Electrochemistry

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