高等学校化学学报 ›› 2019, Vol. 40 ›› Issue (3): 518.doi: 10.7503/cjcu20180550
周和根1,2, 金华1, 郭辉瑞1, 林晶2, 章永凡2()
收稿日期:
2019-08-03
出版日期:
2019-01-24
发布日期:
2019-01-24
作者简介:
联系人简介: 章永凡, 男, 博士, 研究员, 博士生导师, 主要从事光学性质与表面催化理论研究. E-mail:
基金资助:
ZHOU Hegen1,2, JIN Hua1, GUO Huirui1, LIN Jing2, ZHANG Yongfan2,*()
Received:
2019-08-03
Online:
2019-01-24
Published:
2019-01-24
Contact:
ZHANG Yongfan
E-mail:zhangyf@fzu.edu.cn
Supported by:
摘要:
采用基于赝势平面波基组的密度泛函理论方法, 对具有黄铜矿结构的6种CuXY2(X=Ga, In; Y=S, Se, Te)晶体的构型、 电子结构、 线性及二阶非线性光学性质进行了研究. 结果表明, 6种CuXY2均为直接带隙半导体, 具有相似的能带结构. 当X原子相同时, 随着Y原子按S→Se→Te依次改变时, 体系的静态介电常数、 静态折射率和静态倍频系数(d36)依次递增. 在占据带中, 位于价带顶附近的能带对体系倍频效应影响最为显著, 该系列化合物的能带主要成分为Cu的3d轨道和Y原子价层p轨道; 对于空能带, 对倍频系数影响较大的是以X原子价层p轨道为主要成分的能带. 6种晶体中, CuInSe2晶体具有较高的光电导率并对太阳光具有较好的吸收性能. 综合考虑体系的双折射率和倍频效应等因素, CuGaS2和CuGaSe2 2种晶体在二阶非线性光学领域具有潜在的应用价值.
中图分类号:
TrendMD:
周和根, 金华, 郭辉瑞, 林晶, 章永凡. 黄铜矿型铜基硫属半导体材料的电子结构和光学性质. 高等学校化学学报, 2019, 40(3): 518.
ZHOU Hegen,JIN Hua,GUO Huirui,LIN Jing,ZHANG Yongfan. Electronic Structures and Optical Properties of Cu-based Semiconductors with Chalcopyrite-type Structure†. Chem. J. Chinese Universities, 2019, 40(3): 518.
Crystal | a/nm | c/nm | Volume/nm3 | Eg/eV | Ref. | Scissor/eV | ||||
---|---|---|---|---|---|---|---|---|---|---|
Exp. | Cal. | Exp. | Cal. | Exp. | Cal. | Exp. | Cal. | |||
CuGaS2 | 0.5360 | 0.5368 | 1.0491 | 1.0561 | 0.2995 | 0.3069 | 2.43 | 0.669 | [ | 1.761 |
CuGaSe2 | 0.5614 | 0.5667 | 1.1022 | 1.1258 | 0.3474 | 0.3615 | 1.68 | 0.053 | [ | 1.627 |
CuGaTe2 | 0.6024 | 0.6083 | 1.1940 | 1.2156 | 0.4332 | 0.4498 | 1.24 | 0.225 | [ | 1.015 |
CuInS2 | 0.5523 | 0.5592 | 1.1122 | 1.1243 | 0.3392 | 0.3516 | 1.53 | 0.022 | [ | 1.508 |
CuInSe2 | 0.5782 | 0.5874 | 1.1617 | 1.1786 | 0.3884 | 0.4067 | 1.04 | 0.015 | [ | 1.025 |
CuInTe2 | 0.6194 | 0.6283 | 1.2416 | 1.2621 | 0.4764 | 0.4982 | 1.06 | 0.001 | [ | 1.059 |
Table 1 Experimental and theoretical results of cell parameters and band gaps of CuXY2 crystals
Crystal | a/nm | c/nm | Volume/nm3 | Eg/eV | Ref. | Scissor/eV | ||||
---|---|---|---|---|---|---|---|---|---|---|
Exp. | Cal. | Exp. | Cal. | Exp. | Cal. | Exp. | Cal. | |||
CuGaS2 | 0.5360 | 0.5368 | 1.0491 | 1.0561 | 0.2995 | 0.3069 | 2.43 | 0.669 | [ | 1.761 |
CuGaSe2 | 0.5614 | 0.5667 | 1.1022 | 1.1258 | 0.3474 | 0.3615 | 1.68 | 0.053 | [ | 1.627 |
CuGaTe2 | 0.6024 | 0.6083 | 1.1940 | 1.2156 | 0.4332 | 0.4498 | 1.24 | 0.225 | [ | 1.015 |
CuInS2 | 0.5523 | 0.5592 | 1.1122 | 1.1243 | 0.3392 | 0.3516 | 1.53 | 0.022 | [ | 1.508 |
CuInSe2 | 0.5782 | 0.5874 | 1.1617 | 1.1786 | 0.3884 | 0.4067 | 1.04 | 0.015 | [ | 1.025 |
CuInTe2 | 0.6194 | 0.6283 | 1.2416 | 1.2621 | 0.4764 | 0.4982 | 1.06 | 0.001 | [ | 1.059 |
Fig.3 Total and partial density of states(DOSs) of CuGaTe2(A1—A4) and CuInTe2(B1—B4) crystals (A1, B1) Total; (A2, B2) Cu; (A3) Ga; (B3) In; (A4, B4) Te. The zero energy is set to Fermi level(EF).
Fig.4 Variations of the real part(A)—(F) and imaginary part(G)—(L) of dielectric function of CuXY2 crystals(A, G) CuGaS2; (B, H) CuGaSe2; (C, I) CuGaTe2; (D, J) CuInS2; (E, K) CuInSe2; (F, L) CuInTe2.
Fig.6 Variations of reflectivity of CuGaS2(A), CuGaSe2(B) and CuGaTe2(C) crystals Rx and Rz are the reflectivity along x and z directions, respectively.
Fig.7 Variations of real part of photoconductivity of CuGaS2(A), CuGaSe2(B), CuGaTe2(C), CuInS2(D), CuInSe2(E) and CuInTe2(F) crystalsσx and σz are the photoconductivity along x and z directions, respectively.
Crystal | Refractive index at zero frequency | d36/(pm·V-1) at wavelength of 10.6 μm | ||||
---|---|---|---|---|---|---|
This work | Other works | Exp. | This work | Other works | Exp. | |
CuGaS2 | 2.70 | 2.77[ | 2.5—3.05[ | 13.06 | 11.35[ | 14.5±15%[ |
2.62[ | 2.2—2.9[ | |||||
CuGaSe2 | 2.93 | 3.69[ | 2.34—3.38[ | 28.74 | 27.75[ | 30.0±10%[ |
2.82[ | ||||||
CuGaTe2 | 3.35 | 4.99[ | | 114.87 | 70.00[ | |
CuInS2 | 2.98 | 3.22[ | 2.38—2.82[ | 17.87 | 15.85[ | 10.6±15%[ |
2.76[ | 1.6—3[ | |||||
CuInSe2 | 3.32 | 3.54[ | 2.04—3.12[ | 60.16 | 36.25[ | |
3.10[ | ||||||
CuInTe2 | 3.76 | 4.98[ | | 82.02 | 63.00[ | |
3.05[ |
Table 2 Experimental and theoretical values of refractive index and d36 of CuXY2 crystals
Crystal | Refractive index at zero frequency | d36/(pm·V-1) at wavelength of 10.6 μm | ||||
---|---|---|---|---|---|---|
This work | Other works | Exp. | This work | Other works | Exp. | |
CuGaS2 | 2.70 | 2.77[ | 2.5—3.05[ | 13.06 | 11.35[ | 14.5±15%[ |
2.62[ | 2.2—2.9[ | |||||
CuGaSe2 | 2.93 | 3.69[ | 2.34—3.38[ | 28.74 | 27.75[ | 30.0±10%[ |
2.82[ | ||||||
CuGaTe2 | 3.35 | 4.99[ | | 114.87 | 70.00[ | |
CuInS2 | 2.98 | 3.22[ | 2.38—2.82[ | 17.87 | 15.85[ | 10.6±15%[ |
2.76[ | 1.6—3[ | |||||
CuInSe2 | 3.32 | 3.54[ | 2.04—3.12[ | 60.16 | 36.25[ | |
3.10[ | ||||||
CuInTe2 | 3.76 | 4.98[ | | 82.02 | 63.00[ | |
3.05[ |
Fig.8 Variations of d36 coefficient as a function of the numbers of occupied bands of CuGaS2(a) and CuInS2(b)(A), CuGaSe2(a) and CuInSe2(b)(B), CuGaTe2(a) and CuInTe2(b)(C) crystalsThe index of HOCO is 26, and the d36 magnitude is obtained by considering a total of 34 unoccupied energy bands.
Fig.10 Correlations between d36 coefficients and the occupied(A1—A4)/ unoccupied(B1—B4) DOSs of CuGaS2 crystals(A1, B1) Cu; (A2, B2) Ga; (A3, B3) S; (A4, B4) d36. The zero energy is set to EF, and the d36 magnitude at a certain energy level(E) is obtained by considering all the occupied/unoccupied bands distributed in the region between E and EF.
Fig.11 Variations of d36 coefficient as a function of the numbers of unoccupied bands of CuXY2The index of the LUCO is 27, and the d36 magnitude is obtained by considering a total of 26 occupied energy bands.
Fig.12 3D charge density maps of unoccupied bands from the 32nd to 36th of CuGaY2(A) CuGaS2; (B) CuGaSe2; (C) CuGaTe2. The corresponding isovalue is 6.0 e/nm3.
Fig.13 Frequency-dependent variations of the d36 coefficients of CuGaY2(A) and CuInY2(B) crystals (A) a. CuGaS2; b. CuGaSe2; c. CuGaTe2. (B) a. CuInS2; b. CuInSe2; c. CuInTe2.
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