Chem. J. Chinese Universities ›› 2004, Vol. 25 ›› Issue (11): 2070.

• Articles • Previous Articles     Next Articles

Theoretical Studies on the Insertion Reaction of Silylenoid H2SiNaF with R—H(R=F, OH, NH2, CH3)

WANG Huan-Jie, XIE Ju, FENG Da-Cheng, FENG Sheng-Yu   

  1. College of Chemistry, Shandong University, Jinan 250100, China
  • Received:2004-01-20 Online:2004-11-24 Published:2004-11-24

Abstract: The insertion reaction of silylenoid H2SiNaF with RH(R=F,OH,NH2,CH3) was studied at B3LYP/6-31G* level by using density functional theory. The mechanism of these four reactions was analogical. The reaction goes through three stages: electrophilic approach, nucleophilic insertion and substitution, then the intermediate formed. Accounting to zero-point vibration energy, the potential barriers of the four reactions are 0.9, 61.7, 114.6 and 190.6 kJ/mol respectively. The intermediate could dissociate to substituent silane and NaF. This dissociating process has no transition state. The reaction energies for the four reactions are -122.6, -96.3, -6.8 and 50.2 kJ/mol respectively.

Key words: Silylenoid H2SiNaF, Insertion reaction, Density functional theory

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