高等学校化学学报

高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (9): 1613.

• 研究论文 • 上一篇    下一篇

无机盐溶液源溶胶-凝胶法制备锶铋钽铁电陶瓷薄膜过程研究

季惠明, 古彦飞, 徐廷献   

  1. 天津大学材料学院, 先进陶瓷及加工技术教育部重点实验室, 天津300072
  • 收稿日期:2003-09-22 出版日期:2004-09-24 发布日期:2004-09-24
  • 基金资助:

    国家自然科学基金重大项目(批准号:59995520)资助

Preparing Process of SrBi2Ta2O9 Ferroelectric Thin Films by Sol-gel Method Using Soluble Inorganic Salts Source

JI Hui-Ming, GU Yan-Fei, XU Ting-Xian   

  1. Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials of Tianjin University, Tianjin 300072, China
  • Received:2003-09-22 Online:2004-09-24 Published:2004-09-24

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被引次数

5

摘要： 采用可溶性无机盐Sr(NO3)2,Bi(NO3)3及HTaF6为原料,以柠檬酸、乙二醇及乙二胺四乙酸(EDTA)为络合剂,利用溶胶-凝胶旋转涂覆工艺,分别在Al2O3和Pt/Ti/SiO2/Si的衬底上制备了SrBi2Ta2O9(SBT)铁电陶瓷薄膜.采用SEM,XRD及FTIR等微观分析手段,对制备的SBT溶胶与薄膜过程机理进行了实验研究.结果表明,由无机盐溶液原料络合合成SBT溶胶是此方法制膜的关键,其中络合剂的种类、用量和pH值的控制等是重要的影响因素.制备了相组成均一、薄膜表面致密、均匀、无开裂、晶粒尺寸为150nm的多晶膜,获得了剩余极化(2Pr)与矫顽电场强度(2Ec)分别为9.6μC/cm2与76kV/cm铁电性能较好的薄膜材料.

关键词: SrBi2Ta2O9, 溶胶-凝胶, 铁电, 薄膜

Abstract: Strontium bismuth tantalate(SBT) and ferroelectric thin films were prepared by a novel sol-gel method on Al2O3 and Pt/Ti//SiO2/Si substrates by using strontium nitrate, bismuth nitrate and fluorine tantalum acid as the sol precursors, and citric acid-ethylene glycol-ethylenediaminetetraacetic acid(EDTA) as the chelating agents. The structure characterization of the sol and as-grown SBT thin films by FTIR, XRD and SEM revealed that the factors such as kind and content of chelating agents and pH value played a key role in the preparing process. The results show that the polycrystalline films with a single orthorhombic-phase are density, homogeneity and crack-free, and average grain size of 150 nm at 750℃ for 40 min in oxygen atmosphere. The ferroelectrics properties of thin films are obtained that remnant polarization(2Pr) and coercive field(2Ec) are 9.6 μC/cm2 and 76 kV/cm, respectively.

Key words: SrBi2Ta2O9, Sol-gel, Ferroelectricity, Thin film

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