高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (12): 1917.

• 论文 • 上一篇    下一篇

多孔硅跃迁特征的研究

王宝辉, 王德军, 李铁津   

  1. 吉林大学化学系, 长春, 130023
  • 收稿日期:1995-01-09 修回日期:1995-05-21 出版日期:1995-12-24 发布日期:1995-12-24
  • 通讯作者: 王宝辉,男,35岁,博士研究生,现在大庆石油学院工作.
  • 作者简介:王宝辉,男,35岁,博士研究生,现在大庆石油学院工作.
  • 基金资助:

    国家自然科学基金

Investigations of Transition States of Porus Silicon

WANG Bao-Hui, WANG De-Jun, LI Tie-Jin   

  1. Department of Chemistry, Jilin University, Changchun, 130023
  • Received:1995-01-09 Revised:1995-05-21 Online:1995-12-24 Published:1995-12-24

摘要: 采用表面光电压谱和光致荧光激发谱对多孔硅的能带结构和跃迁特性进行了系统研究。结果表明,多孔硅的带隙明显大于单晶硅的带隙,在300~500nm区间观察到几个与制备条件有关的精细结构带,此构带为多孔硅中不同尺寸的硅线能级。这一发现恰与理论计算结果一致,从实验上支持了多孔硅的量子限域模型。

关键词: 多孔硅, 光电压, 光致发光, 电子结构

Abstract: The surface photovoltaic spectroscopy(SPS)and photoluminescence excitation spectroscopy(PLE)were developed for the investigation of transition states of porous silicons,The results indicate that there is a larger band gap in porous silicon than in bulk crystal silicon.Agroup of bands emerge from the energetic position of 300~500 nm,which are dependent on the feature size of the silicon wires in a porous silicon. This experimental finding is in good agreement with the result of calculation of electronic structure. The evidence strongly supports the model of quantum confinement effect.

Key words: Porous silicon, Photovoltage, Photoluminescence, Electronic structure

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