铜包覆多孔硅基材料p-Si@Cu(x)的制备与性能

doi:10.7503/cjcu20160765

摘要/Abstract

摘要：

在球形SiO₂颗粒表面包覆适量的CuO, 经还原得到铜包覆的多孔硅复合材料[p-Si@Cu(x)]. 利用X射线衍射、扫描电子显微镜、透射电子显微镜和比表面积分析等手段对样品的组成、物相结构、微观形貌和孔结构进行分析, 并初步研究了材料的循环性能和倍率性能. 结果表明, 铜包覆量x=0.05时, 在100 mA/g电流密度下, 样品的首次放电容量为3596.9 mA·h/g, 首次充电容量为2590.7 mA·h/g, 首次库仑效率为72.03%; 在1C倍率下可逆容量为1004.9 mA·h/g, 0.1C倍率下循环100周后的可逆容量仍为1706.5 mA·h/g, 容量保持率为76.1%.

关键词: 锂离子电池, 多孔硅基材料, 铜包覆

Abstract:

Nanoscale p-Si@Cu(x)(x stands for the cladding amount of copper) was prepared by Stöber method and magnesiothermic reduction method. The morphologies and structures of p-Si@Cu(x) alloy were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM)、 transmission electron microscopy(TEM) and specific surface area analysis, and the cyclic performance and rate performace of the material were investigated. The results show that the first discharge and charge capacity of p-Si@Cu(0.05) are 3596.9 and 2590.7 mA·h/g, respectively at 100 mA/g and the first coulomb efficiency is 72.03%; its cell cycle stability and rate performance of p-Si@Cu(0.05) are also the best, the reversible capacity is 1004.9 mA·h/g at 1C. The reversible capacity is 1706.5 mA·h/g at 0.1C after 100 times cycling and the capacity remaining rate is 76.1%.

Key words: Lithium-ion battery, Porous silicon material, Copper cladding

中图分类号:

O646

TrendMD:

于志辉, 刘丹丹, 寇艳娜, 夏定国. 铜包覆多孔硅基材料p-Si@Cu(x)的制备与性能. 高等学校化学学报, 2017, 38(5): 837.

YU Zhihui, LIU Dandan, KOU Yanna, XIA Dingguo. Preparation and Properties of Nanoscale p-Si@Cu(x)^†. Chem. J. Chinese Universities, 2017, 38(5): 837.

图/表 14

Scheme 1 Schematic diagram of the fabrication of p-Si@Cu

Fig.1 XRD patterns of SiO2@CuO(x) with different Cu contents a. SiO2@CuO(0.033); b. SiO2@CuO(0.05);c. SiO2@CuO(0.1); d. SiO2@CuO(0.2).

Fig.2 SEM images of SiO2(A), SiO2@CuO(0.05)(B) and SiO2@CuO(0.2)(C)

Fig.3 Energy spectra for SiO2@CuO(0.05)(A) and SiO2@CuO(0.2)(B)

Fig.4 TEM images of precursor sphere SiO2@CuO(0.05)

Fig.5 XRD patterns(A) and partial enlarged detail(B) for p-Si@Cu(x)a. Si@CuO(0.033); b. Si@CuO(0.05); c. Si@CuO(0.1); d. Si@CuO(0.2).

Fig.6 High resolution TEM images of p-Si(A) and p-Si@Cu(0.05)(B)Insets are the corresponding panorama of the two samples.

Fig.7 Nitrogen adsorption/desorption isotherms(A) and distribution of pore size(B) for p-Si@Cu(x)

Fig.8 Discharge/charge curves of p-Si@Cu(x)(A) p-Si; (B) p-Si@Cu(0.033); (C) p-Si@Cu(0.05); (D) p-Si@Cu(0.1); (E) p-Si@Cu(0.2).

Fig.9 Cyclic voltammogram of p-Si@Cu(0.05)

Fig.10 The first cyclic voltammograms of p-Si(a) and p-Si@Cu(0.05)(b)

Fig.11 Cyclic performance(A) and coulombic efficiency(B) of p-Si@Cu(x) at current density of 420 mA/g

Fig.12 Rate performances of p-Si@Cu(x)

Table 1 Rate performance of samples p-Si, p-Si@Cu(0.033), p-Si@Cu(0.05), p-Si@Cu(0.1) and p-Si@Cu(0.2)

Sample	Reversible capacity/(mA·h·g^-1)
Sample	100 mA/g	0.1C	0.5C	1C	100 mA/g
p-Si	1888.8	1655.6	1006.6	683.2	1565.5
p-Si@Cu(0.033)	2138.8	1905.6	1256.6	783.2	1815.5
p-Si@Cu(0.05)	2456.6	2047.8	1494.3	1004.9	2078.9
p-Si@Cu(0.1)	1329.6	1131.6	921.4	656.5	972.4
p-Si@Cu(0.2)	1002.7	805.8	603.1	395.8	664.8

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