高等学校化学学报 ›› 1993, Vol. 14 ›› Issue (5): 706.

• 研究快报 • 上一篇    下一篇

Cu在HOPG上电化学沉积的原子分辨ECSTM现场观测

李春增, 谢兆雄, 毛秉伟, 卓向东, 穆纪千, 叶建辉, 冯祖德, 田昭武   

  1. 厦门大学化学系, 厦门大学, 固体表面物理化学国家重点实验室, 厦门 361005
  • 收稿日期:1992-11-19 出版日期:1993-05-24 发布日期:1993-05-24
  • 通讯作者: 田昭武
  • 基金资助:

    国家自然科学基金;国家科委、福建省科委基金

Study of Copper Electrodeposition on HOPG by in Situ Electrochemical Scanning Tunneling Microscope with Atomic Resolution

LI Chun-Zeng, XIE Zhao-Xiong, MAO Bing-Wei, ZHUO Xiang-Dong, MU Ji-Qian, YE Jian-Hui, FENG Zu-De, TIAN Zhao-Wu   

  1. Deft, of Chem., Slate Key Lab.for Physical Chem.of the Solid Surface, Xiamen Univ., Xiamen, 361005
  • Received:1992-11-19 Online:1993-05-24 Published:1993-05-24

关键词: 电化学扫描隧道显微镜, 原子分辨, Cu, 电沉积, 吸附晶格

Abstract: Ahome-built in situ electrochemical scanning tunneling microscope (ECSTM) was applied to investigation of the electrodeposition of Cu on HOPGin CuSO4 solution under potential control.During potential cycling, the deposition and dissolution processes of Cu were clearly observed.At about-250 mV(vs.Cu2+/Cu) it was found that the STMimages changed with time.Aregular hexagonal lattice was observed first, with a next-neighbour atomic distance of 0.40±0.02 nm, which is considered to be HOPG(0001)-(√3×√3)R30° Cu adlattice.Following that, Cu(111) and Cu(110) faces appeared, both showing long range-corrugation patterns.

Key words: ECSTM, Atomic resolution, Cu, Electrodeposition, Adlattice

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