碲化锗场效应晶体管的制备及电学性能

doi:10.7503/cjcu20200311

高等学校化学学报 ›› 2020, Vol. 41 ›› Issue (9): 2032.doi: 10.7503/cjcu20200311

碲化锗场效应晶体管的制备及电学性能

张鑫¹, 赵付来¹, 王宇¹, 梁雪静¹, 冯奕钰¹^,², 封伟¹^,²()

^1.天津大学材料科学与工程学院, 2. 先进陶瓷与加工技术教育部重点实验室, 天津 300072
^3.郑州大学材料加工与模具教育部重点实验室, 郑州 450002

收稿日期:2020-06-01 出版日期:2020-09-10 发布日期:2020-09-02
通讯作者: 封伟 E-mail:weifeng@tju.edu.cn
基金资助:
国家自然科学重点基金(51633007);国家自然科学基金(批准号(51573125);51573147, 51803149, 51973155)资助

Preparation and Electrical Properties of Germanium Telluride Field Effect Transistor

ZHANG Xin¹, ZHAO Fulai¹, WANG Yu¹, LIANG Xuejing¹, FENG Yiyu¹^,², FENG Wei¹^,²()

^1.School of Materials Science and Engineering, 2. Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University, Tianjin 300072, China
^3.Key Laboratory of Materials Processing and Mold, Ministry of Education, Zhengzhou University, Zhengzhou 450002, China

Received:2020-06-01 Online:2020-09-10 Published:2020-09-02
Contact: FENG Wei E-mail:weifeng@tju.edu.cn
Supported by:
Supported by the State Key Program of National Natural Science Foundation of China(51633007);the National Natural Science Foundation of China(51573125)

摘要/Abstract

摘要：

采用微机械剥离法得到横向尺寸为10 μm的碲化锗(GeTe)纳米片. 通过电子束曝光和真空溅射镀膜的方法, 以钛金合金为接触电极, 制备基于二维碲化锗(2D-GeTe)纳米材料的场效应晶体管(FET), 并测定了其电学性能. 结果表明, 剥离所得GeTe纳米材料具有良好的结晶性, 光学带隙为1.98 eV, 属于p型半导体; 该场效应晶体管展现出了6.4 cm²·V^?1·s^?1的载流子迁移率和670的开关电流比的良好电学性能.

关键词: 碲化锗, 二维材料, 微机械剥离法, 场效应晶体管

Abstract:

Compared with three-dimensional(3D) materials, two-dimensional(2D) materials have excellent photoelectric properties, and can be used in many fields such as electronics and photocatalysis, etc. Two-dimensional germanium telluride(2D-GeTe) belongs to a narrow-band gap semiconductor, and its carrier mobility has a theoretical value of up to 1066.33 cm²·V^-1·s^-1, but its crystal structure limits its application in the field of optoelectronics. In this work, a GeTe alloy was synthesized by a high-temperature sintering method in a tube furnace, and then a GeTe nanosheet with a lateral dimension about 10 μm successfully was prepared by micromechanical exfoliation. After heat-treating the material, through the method of electron beam exposure and vacuum sputtering coating, using titanium(10 nm)/gold(60 nm) alloy as the contact electrode, the 2D-GeTe based field effect transistor(FET) was prepared, and the electrical properties were measured at room temperature. The results show that the GeTe nanomaterials obtained by exfoliating have good crystallinity, a wide optical absorption range, and an optical band gap of 1.98 eV, which belongs to p-type semiconductors. At the same time, the FET devices prepared based on 2D-GeTe exhibits favorable electrical properties, with a channel length of 7 μm, a channel width of 3 μm, and a carrier mobility of 6.4 cm²·V^-1·s^-1, the switching current ratio is 670. And the output curve is non-linear, which indicates that due to the preparation process and the environment, there is a clear Schottky barrier between the material and the contact electrode. In short, the study of 2D-GeTe electrical properties and the successful preparation of FET devices have enriched the types of two-dimensional materials in the field of semiconductor optoelectronic devices, and provide some reference and guidance for the research of high optoelectronic devices.

Key words: Germanium telluride, Two-dimensional material, Micromechanical stripping method, Field effect transistor

中图分类号:

O649

TrendMD:

张鑫, 赵付来, 王宇, 梁雪静, 冯奕钰, 封伟. 碲化锗场效应晶体管的制备及电学性能. 高等学校化学学报, 2020, 41(9): 2032.

ZHANG Xin, ZHAO Fulai, WANG Yu, LIANG Xuejing, FENG Yiyu, FENG Wei. Preparation and Electrical Properties of Germanium Telluride Field Effect Transistor. Chem. J. Chinese Universities, 2020, 41(9): 2032.

图/表 6

Fig.1 Annealing process diagram of GeTe synthesis

Scheme 1 Schematic diagram of electrical test of FET device

Fig.2 XRD patterns of bulk GeTe and GeTe?E nanosheets

Fig.3 Optical photo(A) and SEM image(B) of FET based on GeTe?E, HRTEM image(C) and AFM(D) of GeTe?EInset of (C) is SAED pattern of GeTe?E; inset of (D) is thickness of device channel.

Fig.4 Raman spectra of GeTe and GeTe?E samples(A), PL spectrum of GeTe?E nanosheets(B)

Fig.5 Transfer characteristic curve(Ids?Vbg)(A) and output characteristic curve(Ids?Vds)(B) of FET device(A) Vds=0.1 V; (B) bottom gate voltage range -60 V to 60 V, step size 30 V, Vds=-4—4 V, step size 0.15 V.

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碲化锗场效应晶体管的制备及电学性能

Preparation and Electrical Properties of Germanium Telluride Field Effect Transistor

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