Ir(111)表面石墨烯中缺陷的原子结构确认

doi:10.7503/cjcu20190570

高等学校化学学报 ›› 2020, Vol. 41 ›› Issue (1): 49-55.doi: 10.7503/cjcu20190570

Ir(111)表面石墨烯中缺陷的原子结构确认

李世超^1,²,刘梦溪^1,^*(),裘晓辉^1,^2,^*()

^1. 中国科学院纳米标准与检测重点实验室,中国科学院纳米科学卓越创新中心, 国家纳米科学中心, 北京 100190
^2. 中国科学院大学, 北京 100049

收稿日期:2019-11-04 出版日期:2020-01-10 发布日期:2019-11-26
通讯作者: 刘梦溪,裘晓辉 E-mail:liumx@nanoctr.cn;xhqiu@nanoctr.cn
基金资助:
国家重点研发计划项目批准号:(2017YFA0205000);国家重点研发计划项目批准号:(2016YFA0200700);国家自然科学基金批准号:(21603045);国家自然科学基金批准号:(21972032);国家自然科学基金批准号:(21425310);国家自然科学基金批准号:(21790353);国家自然科学基金批准号:(21721002);中国科学院-北京大学率先合作团队项目资助.

Structural Ide.pngication of Defects on Graphene/Ir(111) ^†

LI Shichao^1,²,LIU Mengxi^1,^*(),QIU Xiaohui^1,^2,^*()

^1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
^2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-11-04 Online:2020-01-10 Published:2019-11-26
Contact: Mengxi LIU,Xiaohui QIU E-mail:liumx@nanoctr.cn;xhqiu@nanoctr.cn
Supported by:
? Supported by the National Key Research and Development Program of China Nos(2017YFA0205000);? Supported by the National Key Research and Development Program of China Nos(2016YFA0200700);the National Natural Science Foundation of China Nos(21603045);the National Natural Science Foundation of China Nos(21972032);the National Natural Science Foundation of China Nos(21425310);the National Natural Science Foundation of China Nos(21790353);the National Natural Science Foundation of China Nos(21721002);and the Chinese Academy of Sciences-Peking University Pioneer Cooperation Team, China

摘要/Abstract

摘要：

识别和解析石墨烯中缺陷的精确原子结构是研究不同类型缺陷的物化特性, 实现石墨烯物性调控的前提, 可以为在原子尺度研究石墨烯缺陷的构效关系提供重要的实验依据. 本文结合扫描隧道显微镜(STM)和原子力显微镜(AFM)确认了在Ir(111)表面生长的石墨烯中自发形成的缺陷, 以及通过离子轰击方法在石墨烯中引入的多种缺陷结构, 包括单空位缺陷、非六元环拓扑结构以及石墨烯层下的基底缺陷.

关键词: 扫描隧道显微镜, qPlus 原子力显微镜, 石墨烯, 缺陷, 空位, 铱(111)表面

Abstract:

The ide.pngication of the precise structure of the defects is a prerequisite for studying the physicochemical properties of different types of defects and achieving of graphene properties. Scanning tunneling microscopy(STM) and atomic force microscopy(AFM) were combined to study the precise structure of graphene defects formed during the growth process on Ir(111) surface and a.pngicially induced by ion sputtering, including single vacancies, nonhexagonal topological structures, as well as the defects under graphene layer.

Key words: Scanning tunneling microscopy, qPlus atomic force microscopy, Graphene, Defect, Vacancy, Ir(111) surface

中图分类号:

O647
O484.1

李世超,刘梦溪,裘晓辉. Ir(111)表面石墨烯中缺陷的原子结构确认[J]. 高等学校化学学报, 2020, 41(1): 49-55.

LI Shichao,LIU Mengxi,QIU Xiaohui. Structural Ide.pngication of Defects on Graphene/Ir(111) ^†[J]. Chemical Journal of Chinese Universities, 2020, 41(1): 49-55.

图/表 5

Fig.1 Moiré patterns of graphene grown on Ir(111) (A) Large-scale STM image of graphene on Ir(111); (B) Zoom-in STM image of the region indicated by the white square in (A); (C) the corresponding AFM image of (B); (D) dI/dV measurement on graphene recorded at the location indicated by the green dot in (A). Scan parameter: (A) -600 mV, 50 pA; (B) 1 V, 100 pA; (C) 0 V.

Fig.2 Defects in graphene created by ion sputtering (A) STM image of graphene on Ir(111) after Ar+ sputtering; (B) STM image of the graphene sample shown in(A) after annealing at 640 ℃; (C) STM image of graphene on Ir(111) after He+ sputtering; (D) STM image of the sample shown in (C) after annealing at 640 ℃. Scan parameter: (A) -30 mV, 500 pA; (B) -73 mV, 400 pA; (C) -6 mV, 1.5 nA; (D) -60 mV, 1.2 nA.

Fig.3 Substrate defect under graphene (A) STM image of graphene with defect located on the underlying Ir substrate(-1 mV, 900 pA); (B) the corresponding AFM image of (A) showing the seamless honeycomb lattices of graphene.

Fig.4 Single vacancies in graphene on Ir(111) (A) STM image of graphene on Ir(111) with three vacancies(-1 mV, 1 nA); (B) the corresponding AFM image of (A); (C) zoom-in image of the area indicated by the red square in (B), with the structural model superimposed; (D) force curves taken at a carbon site(a) and a vacancy site(b).

Fig.5 Nonhexagonal topological defect in graphene (A) STM image(-509 mV, 40 pA); (B) the corresponding AFM image of graphene involving pentagons and heptagons; (C) laplace filtered image of (B), with structural model superimposed.

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Ir(111)表面石墨烯中缺陷的原子结构确认

Structural Ide.pngication of Defects on Graphene/Ir(111) ^†

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Ir(111)表面石墨烯中缺陷的原子结构确认

Structural Ide.pngication of Defects on Graphene/Ir(111) †

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Structural Ide.pngication of Defects on Graphene/Ir(111) ^†