高等学校化学学报 ›› 2020, Vol. 41 ›› Issue (1): 49-55.doi: 10.7503/cjcu20190570

• 研究论文 • 上一篇    下一篇

Ir(111)表面石墨烯中缺陷的原子结构确认

李世超1,2,刘梦溪1,*(),裘晓辉1,2,*()   

  1. 1. 中国科学院纳米标准与检测重点实验室,中国科学院纳米科学卓越创新中心, 国家纳米科学中心, 北京 100190
    2. 中国科学院大学, 北京 100049
  • 收稿日期:2019-11-04 出版日期:2020-01-10 发布日期:2019-11-26
  • 通讯作者: 刘梦溪,裘晓辉 E-mail:liumx@nanoctr.cn;xhqiu@nanoctr.cn
  • 基金资助:
    国家重点研发计划项目批准号:(2017YFA0205000);国家重点研发计划项目批准号:(2016YFA0200700);国家自然科学基金批准号:(21603045);国家自然科学基金批准号:(21972032);国家自然科学基金批准号:(21425310);国家自然科学基金批准号:(21790353);国家自然科学基金批准号:(21721002);中国科学院-北京大学率先合作团队项目资助.

Structural Ide.pngication of Defects on Graphene/Ir(111)

LI Shichao1,2,LIU Mengxi1,*(),QIU Xiaohui1,2,*()   

  1. 1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-11-04 Online:2020-01-10 Published:2019-11-26
  • Contact: Mengxi LIU,Xiaohui QIU E-mail:liumx@nanoctr.cn;xhqiu@nanoctr.cn
  • Supported by:
    ? Supported by the National Key Research and Development Program of China Nos(2017YFA0205000);? Supported by the National Key Research and Development Program of China Nos(2016YFA0200700);the National Natural Science Foundation of China Nos(21603045);the National Natural Science Foundation of China Nos(21972032);the National Natural Science Foundation of China Nos(21425310);the National Natural Science Foundation of China Nos(21790353);the National Natural Science Foundation of China Nos(21721002);and the Chinese Academy of Sciences-Peking University Pioneer Cooperation Team, China

摘要:

识别和解析石墨烯中缺陷的精确原子结构是研究不同类型缺陷的物化特性, 实现石墨烯物性调控的前提, 可以为在原子尺度研究石墨烯缺陷的构效关系提供重要的实验依据. 本文结合扫描隧道显微镜(STM)和原子力显微镜(AFM)确认了在Ir(111)表面生长的石墨烯中自发形成的缺陷, 以及通过离子轰击方法在石墨烯中引入的多种缺陷结构, 包括单空位缺陷、 非六元环拓扑结构以及石墨烯层下的基底缺陷.

关键词: 扫描隧道显微镜, qPlus 原子力显微镜, 石墨烯, 缺陷, 空位, 铱(111)表面

Abstract:

The ide.pngication of the precise structure of the defects is a prerequisite for studying the physicochemical properties of different types of defects and achieving of graphene properties. Scanning tunneling microscopy(STM) and atomic force microscopy(AFM) were combined to study the precise structure of graphene defects formed during the growth process on Ir(111) surface and a.pngicially induced by ion sputtering, including single vacancies, nonhexagonal topological structures, as well as the defects under graphene layer.

Key words: Scanning tunneling microscopy, qPlus atomic force microscopy, Graphene, Defect, Vacancy, Ir(111) surface

中图分类号: