Preparation and Properties of Graphene/polyimide Composites with High Dielectric Constant†

doi:10.7503/cjcu20170011

Abstract

Abstract:

Quaternary ammonium can be served as the reducing agent for the fabrication of graphene/polyimide(rGO/PI) composites via the in-situ chemical reduction of graphene oxide dispersed in polyimide matrix during the thermal imidization of polyimdes. The results showed that the dielectric constant of graphene/polyimide composites was 40 times as compared with that of graphene oxide/polyimide without the addition of tetrabutyl ammonium bromide. The thermostabilities and mechanical properties of graphene/polyimide composites were also improved simultaneously. Moreover, the quaternary ammonium surfactants would not remain in the composites, which can be decomposed after the rGO/PI composite materials was produced under high temperature.

Key words: Graphene, Quaternary ammonium, Composite, Dielectric constant, Reducing agent, Polyimide

TrendMD:

LIU Hui, ZHAO Jianying, YAO Haibo, GUO Haiquan, GAO Lianxun. Preparation and Properties of Graphene/polyimide Composites with High Dielectric Constant^†[J]. Chem. J. Chinese Universities, 2017, 38(7): 1264.

Figures/Tables 7

Scheme 1 Preparation of rGO/PI composites via the in situ reduction

Fig.1 Dependence of dielectric constants(A) and dielectric loss(B) on the frequency for PI, GO/PI, BGO/PI and IGO/PI composites at room temperature

Fig.2 TGA curves of pure PI, GO/PI, BGO/PI and IGO/PI composite films

Table 1 Thermal and mechanical properties of the pure PI, GO/PI, BGO/PI and IGO/PI composite films

Sample	w_GO(%)	Molar fraction of NR₄X(%)	T_d,5%/℃	T_g/℃	Tensile strength/MPa	Tensile modulus/GPa	Elongation at break(%)
PI	0	0	567.6	279.9	106±2.0	2.0±0.2	23.0±7.0
GO-1.0/PI	1.0	0	571.3	280.1	138±4.0	2.2±0.2	23.9±6.6
BGO-1.0/PI	1.0	2.0(TBAB)	575.8	285.3	144±4.2	2.3±0.3	25.2±9.7
IGO-1.0/PI	1.0	2.0(TBAI)	575.9	286.8	140±3.8	2.2±0.2	28.8±9.9
GO-1.5/PI	1.5	0	563.6	286.8	154±5.1	2.3±0.2	21.1±6.4
BGO-1.5/PI	1.5	3.0(TBAB)	561.7	289.5	159±4.0	2.3±0.2	26.3±5.0
IGO-1.5/PI	1.5	3.0(TBAI)	560.7	277.9	167±6.7	2.3±0.2	19.7±11.0

Fig.3 Comparison of tensile strength(A) and tensile modulus(B) of pure PI, GO/PI, BGO/PI and IGO/PI films for 1.0%(a) and 1.5%(b) GO contents

Fig.4 Variation in storage modulus(A) and loss tangent(B) with temperature for PI, GO/PI, BGO/PI and IGO/PI composite films

Fig.5 SEM images of the fracture surfaces of pure PI(A), GO-1.0/PI(B), BGO-1.0/PI(C), IGO-1.0/PI(D), GO-1.5/PI(E), BGO-1.5/PI(F) and IGO-1.5/PI(G)

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