Advances in Surface-enhanced Raman ScatteringSemiconductor Substrates

Chem. J. Chinese Universities

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Advances in Surface-enhanced Raman ScatteringSemiconductor Substrates

ZHAO Bing*, XU Wei-Qing, RUAN Wei-Dong, HAN Xiao-Xia

State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China

Received:2008-10-16 Revised:1900-01-01 Online:2008-12-10 Published:2008-12-10
Contact: ZHAO Bing

Abstract

Abstract: The advances of surface-enhanced Raman scattering(SERS) on semiconductor substrates, which is also the major research of our group in the past three years, are summarized in this paper. The application of semiductor nanoparticles explored the scope of SERS substrates. Some possible mechanisms different from noble metal substrates were discussed. The major contribution of semiconductor substrates for SERS maybe charge-transfer. Some phenomena, such as nanoparticle size dependence, half-width decrease of spectra, exciting line dependence, were discussed. The possible reasons of chemical enhancement, electromagnetic enhancement, surface defects of semiconductor, exciton Bohr radius were analysed.

Key words: Surface-enhanced Raman scattering(SERS), Semiconductor, Substrate

CLC Number:

O657

TrendMD:

ZHAO Bing*, XU Wei-Qing, RUAN Wei-Dong, HAN Xiao-Xia. Advances in Surface-enhanced Raman ScatteringSemiconductor Substrates[J]. Chem. J. Chinese Universities, doi: .

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Advances in Surface-enhanced Raman ScatteringSemiconductor Substrates

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