高等学校化学学报 ›› 2021, Vol. 42 ›› Issue (2): 595.doi: 10.7503/cjcu20200638
收稿日期:
2020-09-01
出版日期:
2021-02-10
发布日期:
2020-12-21
通讯作者:
曹阳
E-mail:yangcao@xmu.edu.cn
基金资助:
WANG Wei, LU Xiangchao, ZHOU Lijun, LU Yizhen, CAO Yang()
Received:
2020-09-01
Online:
2021-02-10
Published:
2020-12-21
Contact:
CAO Yang
E-mail:yangcao@xmu.edu.cn
Supported by:
摘要:
二维压电材料由于具有机械强度高、 性质多样、 柔性透明等特点, 吸引了广大科研人员的研究兴趣. 基于二维压电材料的柔性电子器件、 纳米传感器以及光电子器件等功能性器件也展现出了良好的性能和应用前景. 对此类器件的构筑和应用需要系统的设计和性能研究. 本综述围绕功能性的二维压电器件, 系统地论述了压电效应在(光)电子器件中的性能调控机制, 并总结其设计和制备流程以及如何实现多种功能性应用, 以期对此类器件的设计和研究提供参考.
中图分类号:
TrendMD:
王伟, 卢香超, 周立军, 鲁艺珍, 曹阳. 基于二维压电材料功能性器件的设计、 构筑与性能研究. 高等学校化学学报, 2021, 42(2): 595.
WANG Wei, LU Xiangchao, ZHOU Lijun, LU Yizhen, CAO Yang. Design, Construction and Performance Research of Functional Devices Based on Two-dimensional Piezoelectric Materials. Chem. J. Chinese Universities, 2021, 42(2): 595.
Fig.1 Design and construction of two?dimensional piezoelectric devices[4—7](A) Copyright 2009, American Physical Society. (B) Copyright 2009, American Physical Society. (C) Copyright 2017, American Chemical Society. (D) Copyright 2016, American Chemical Society; Copyright 2017, American Chemical Society.
Fig.2 Principle and the working mechanism of piezoelectric effect(A) Structure schematic diagram of MoS2[8], Copyright 2013, AIP Publishing. yellow balls: sulphur atoms, pink balls: molybdenum atoms; (B) principle of piezoelectricity in MoS2; (C, D) diagram of band bending of Schottky barrier under tensile strain(C) and compression strain(D). The semiconductor is piezoelectric, ? means the Schottky barrier without strain, ?? means the Schottky barrier under strain, Ep is piezoelectric field.
Fig.3 Methods of introducing strain into 2D materialsIntroducing strain by bending flexible substrate(A)[4], Copyright 2009, American Physical Society; (B) using rough or patterned substrate[7], Copyright 2017, American Chemical Society; (C) using wrinkling and bubbles[62], Copyright 2013, American Chemical Society; (D) using AFM tip[2], Copyright 2011, American Chemical Society; (E) gravity in the suspended state[68], Copyright 2017, Wiley?VCH; (F) lattice mismatch[69], Copyright 2019, MDPI.
Fig.4 Methods of characterizing strain and piezoelectricity in 2D materials(A) Characterize strain by establishing mathematical model; (B) Raman spectrum[16], Copyright 2016, American Chemical Society; (C) optical second?harmonic generation (SHG) spectroscopy[5], Copyright 2017, American Chemical Society; (D) characterize piezoelectric effect by detecting the current and voltage signals of the external circuit of the bending device[21], Copyright 2017, American Chemical Society; (E) mapping piezoelectric potential of 2D materials bubbles using KPFM. Left panel: schematic of our KPFM set?up. Middle panel: surface potential of monolayer BN bubble. Right panel: surface potential of bilayer BN bubble[58]. Copyright 2020, Wiley?VCH; (F) PFM for measuring out?of?plane piezoelectric response[82], Copyright 2018, American Chemical Society.
Fig.5 Schematic diagram of nanogenerator based on two?dimensional piezoelectric materials(A) Schematic diagram for the fabrication of flexible device preparation based on MSM structure; (B) schematic diagram of integrated WSe2 generator array; (C) output current of different numbers of WSe2 generator array, the right figure means the output current curve of a single bending cycle[22], Copyright 2017, Wiley?VCH.
Fig.6 Solar cells and photodetectors based on two?dimensional piezoelectric materials(A) Schematic diagram of a solar cell based on a two?dimensional piezoelectric material and its energy band diagram before and after stress; (B) schematic diagram of a photodetector based on monolayer MoS2; (C) time dependence of source?drain current of the device during the light switching on/off at 1 V. Left: piezoelectric effect; right: piezoresistive effect[101], Copyright 2019, Wiley?VCH. (D) Schematic diagram for the fabrication of photodetectors based on the patterned substrate[7], Copyright 2017, American Chemical Society.
Fig.7 Field effect transistor devices and nanosensors based on two?dimensional piezoelectric materials(A) Schematic diagram of pressure?gated FET based on MoS2 and ZnO; (B) schematic diagram of carriers in MoS2 induced by piezoelectric potential in ZnO; (C) pressure?dependent change in drain current at the drain voltage of 1 V and gate voltage of 2 V[6], Copyright 2016, American Chemical Society; (D) schematic diagram of In2Se3 flexible device used to detect pulse and respiratory; (E) signal data graph of pulse sensors based on In2Se3 flexible device. Left: the arterial transient pulse signal. Right: enlarged view of pulse signals[43], Copyright 2019, American Chemical Society.
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