高等学校化学学报

高等学校化学学报 ›› 2013, Vol. 34 ›› Issue (3): 527.doi: 10.7503/cjcu20120656

• 研究论文: 无机化学 • 上一篇    下一篇

以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究

李善文1, 李伟1, 李国兴1, 张宝林1, 周本初1, 陶伯万2, 高忠民3   

  1. 1. 集成光电子学国家重点联合实验室, 吉林大学电子科学与工程学院, 长春 130012;
    2. 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054;
    3. 吉林大学化学学院, 无机合成与制备化学国家重点实验室, 长春 130012
  • 收稿日期:2012-07-12 出版日期:2013-03-10 发布日期:2013-02-18
  • 通讯作者: 李国兴,男,博士,讲师,主要从事高温超导材料方面的研究.E-mail:liguoxing@jlu.edu.cn;张宝林,男,博士,教授,博士生导师,主要从事高温超导材料及半导体发光器件方面的研究.E-mail:zbl@jlu.edu.cn E-mail:liguoxing@jlu.edu.cn;zbl@jlu.edu.cn
  • 基金资助:

    国家自然科学基金(批准号:51002063)资助.

Comparative Study of YBCO Films Grown on Biaxially Textured Ni Substrate and LAO Substrate by Photo-assisted Metal Organic Chemical Vapor Deposition

LI Shan-Wen1, LI Wei1, LI Guo-Xing1, ZHANG Bao-Lin1, CHOU Pen-Chu1, TAO Bo-Wan2, GAO Zhong-Min3   

  1. 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
    2. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    3. College of Chemistry, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University, Changchun 130012, China
  • Received:2012-07-12 Online:2013-03-10 Published:2013-02-18

PDF (PC)

被引次数

1

摘要：

采用光辅助金属有机物化学气相沉积(MOCVD)法, 在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长, 并与LaAlO3[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比. 发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30 ℃, 但生长速度更快. 经分析认为, 这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的. Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.

关键词: Yba2Cu3O7-x(YBCO), Ni衬底, 金属有机物化学气相沉积(MOCVD), 光辅助MOCVD

Abstract:

A comparative study of YBa2Cu3O7-x(YBCO) films grown on biaxially textured Ni substrates [using CeO2/YSZ/Y2O3(YSZ is Y stabilized ZrO2) as buffer layers] and LaAlO3(100)[LAO(100)] substrates by photo-assisted metal organic chemical vapor deposition(MOCVD) was carried out. It is found that the growing temperature of YBCO film grown on Ni substrate is lower about 30 ℃ than that on LAO substrate. Besides, the growth rate on Ni substrate is higher than that on LAO. The phenomena can be explained by the fact that the thermal conduction of Ni substrate is better than LAO. The critical superconducting current density Jc of YBCO films grown on Ni substrate and LAO substrate are about 0.5 and 1.8 MA/cm2, respectively.

Key words: Yba2Cu3O7-x(YBCO), Ni substrate, Metal organic chemical vapor deposition(MOCVD), Photo-assisted MOCVD

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