高等学校化学学报

高等学校化学学报

• 研究论文 • 上一篇    下一篇

空穴掺杂对Li1-xCuVO4(x≤0.1)一维自旋链材料光谱性质的影响

杜菲, 王春忠, 李旭, 李昂, 陈岗   

  1. 吉林大学材料科学与工程学院, 长春 130012
  • 收稿日期:2007-11-22 修回日期:1900-01-01 出版日期:2008-07-10 发布日期:2008-07-10
  • 通讯作者: 陈岗

Effect of Hole-doping on the Spectrum Properties of One-dimensional Spin Chain Material Li1-xCuVO4(x≤0.1)

DU Fei, WANG Chun-Zhong, LI Xu, LI Ang, CHEN Gang*   

  1. College of Materials Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2007-11-22 Revised:1900-01-01 Online:2008-07-10 Published:2008-07-10
  • Contact: CHEN Gang

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摘要： 采用固相烧结方法合成了部分Li+缺失的一维自旋链材料Li1-xCuVO4(x≤0.1). X射线衍射和Raman光谱分析结果表明, 所得材料属于正交晶系, 具有反尖晶石结构; Li+的缺失并未对材料的长程和短程结构具有明显的影响. X射线光电子能谱(XPS)研究结果表明, 空穴掺杂前后, O离子和V离子的价态并未随Li+缺失而发生改变, 仍然为-2价和+5价. 而Cu离子的2p53d10 L态向高结合能区发生了偏移, 说明在部分Cu2+上出现了空穴, 形成了Cu3+.

关键词: LiCuVO4, 一维自旋链材料, 空穴掺杂

Abstract: One-dimensional spin chain materials Li1-xCuVO4(x≤0.1) were synthesized by solid state reaction. The X-ray diffraction show that Li1-xCuVO4(x≤0.1) was crystallized in inverse spinel structure. Raman measurement displayed 15 vibration models. The loss of Li+ had no effect on the long-range and short-range structure based on the X-ray diffraction and Raman spectrum. The X-ray photoemission spectra revealed that the valence state of O ion and V ion remained unchanged in the hole-doped materials, corresponding to the -2 and +5, respectively. The peak position of Cu2p shifted to the high binding energy in the doped materials, indicating the appearance of holes on the Cu2+ and therefore an existence of Cu3+.

Key words: LiCuVO4, One-dimensional spin chain material, Hole doping

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