Chemical Journal of Chinese Universities ›› 2020, Vol. 41 ›› Issue (1): 49-55.doi: 10.7503/cjcu20190570

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Structural Ide.pngication of Defects on Graphene/Ir(111)

LI Shichao1,2,LIU Mengxi1,*(),QIU Xiaohui1,2,*()   

  1. 1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-11-04 Online:2020-01-10 Published:2019-11-26
  • Contact: Mengxi LIU,Xiaohui QIU E-mail:liumx@nanoctr.cn;xhqiu@nanoctr.cn
  • Supported by:
    ? Supported by the National Key Research and Development Program of China Nos(2017YFA0205000);? Supported by the National Key Research and Development Program of China Nos(2016YFA0200700);the National Natural Science Foundation of China Nos(21603045);the National Natural Science Foundation of China Nos(21972032);the National Natural Science Foundation of China Nos(21425310);the National Natural Science Foundation of China Nos(21790353);the National Natural Science Foundation of China Nos(21721002);and the Chinese Academy of Sciences-Peking University Pioneer Cooperation Team, China

Abstract:

The ide.pngication of the precise structure of the defects is a prerequisite for studying the physicochemical properties of different types of defects and achieving of graphene properties. Scanning tunneling microscopy(STM) and atomic force microscopy(AFM) were combined to study the precise structure of graphene defects formed during the growth process on Ir(111) surface and a.pngicially induced by ion sputtering, including single vacancies, nonhexagonal topological structures, as well as the defects under graphene layer.

Key words: Scanning tunneling microscopy, qPlus atomic force microscopy, Graphene, Defect, Vacancy, Ir(111) surface

CLC Number: