Structural Ide.pngication of Defects on Graphene/Ir(111) †

doi:10.7503/cjcu20190570

Abstract

Abstract:

The ide.pngication of the precise structure of the defects is a prerequisite for studying the physicochemical properties of different types of defects and achieving of graphene properties. Scanning tunneling microscopy(STM) and atomic force microscopy(AFM) were combined to study the precise structure of graphene defects formed during the growth process on Ir(111) surface and a.pngicially induced by ion sputtering, including single vacancies, nonhexagonal topological structures, as well as the defects under graphene layer.

Key words: Scanning tunneling microscopy, qPlus atomic force microscopy, Graphene, Defect, Vacancy, Ir(111) surface

CLC Number:

O647
O484.1

LI Shichao,LIU Mengxi,QIU Xiaohui. Structural Ide.pngication of Defects on Graphene/Ir(111) ^†[J]. Chemical Journal of Chinese Universities, 2020, 41(1): 49-55.

Figures/Tables 5

Fig.1 Moiré patterns of graphene grown on Ir(111) (A) Large-scale STM image of graphene on Ir(111); (B) Zoom-in STM image of the region indicated by the white square in (A); (C) the corresponding AFM image of (B); (D) dI/dV measurement on graphene recorded at the location indicated by the green dot in (A). Scan parameter: (A) -600 mV, 50 pA; (B) 1 V, 100 pA; (C) 0 V.

Fig.2 Defects in graphene created by ion sputtering (A) STM image of graphene on Ir(111) after Ar+ sputtering; (B) STM image of the graphene sample shown in(A) after annealing at 640 ℃; (C) STM image of graphene on Ir(111) after He+ sputtering; (D) STM image of the sample shown in (C) after annealing at 640 ℃. Scan parameter: (A) -30 mV, 500 pA; (B) -73 mV, 400 pA; (C) -6 mV, 1.5 nA; (D) -60 mV, 1.2 nA.

Fig.3 Substrate defect under graphene (A) STM image of graphene with defect located on the underlying Ir substrate(-1 mV, 900 pA); (B) the corresponding AFM image of (A) showing the seamless honeycomb lattices of graphene.

Fig.4 Single vacancies in graphene on Ir(111) (A) STM image of graphene on Ir(111) with three vacancies(-1 mV, 1 nA); (B) the corresponding AFM image of (A); (C) zoom-in image of the area indicated by the red square in (B), with the structural model superimposed; (D) force curves taken at a carbon site(a) and a vacancy site(b).

Fig.5 Nonhexagonal topological defect in graphene (A) STM image(-509 mV, 40 pA); (B) the corresponding AFM image of graphene involving pentagons and heptagons; (C) laplace filtered image of (B), with structural model superimposed.

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