高等学校化学学报 ›› 2003, Vol. 24 ›› Issue (7): 1163.

• 研究简报 • 上一篇    下一篇

镍基板上低温合成定向纳米碳管

王升高1,2, 汪建华1, 王传新1,2, 满卫东1,2, 马志斌1, 张保华1   

  1. 1. 武汉化工学院材料科学与工程系, 武汉 430073;
    2. 中国科学院等离子体物理研究所, 合肥 220031
  • 收稿日期:2002-08-08 出版日期:2003-07-24 发布日期:2003-07-24
  • 通讯作者: 王升高(1969年出生),男,博士研究生,讲师,从事等离子体化学及纳米材料的制备研究.E-mail:wyysg0984@sina.com E-mail:wyysg0984@sina.com
  • 基金资助:

    湖北省教育厅重点项目(批准号:2002A20008)资助

Synthesis of Aligned Carbon Nanotubes on Ni Substrate at Low Temperature

WANG Sheng-Gao1,2, WANG Jian-Hua1, WANG Chuan-Xin1,2, MAN Wei-Dong1,2, MA Zhi-Bin1, ZHANG Bao-Hua1   

  1. 1. Department of Material Science and Engineering, Wuhan Institute of Chemical Technology, Wuhan 430073, China;
    2. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 220031, China
  • Received:2002-08-08 Online:2003-07-24 Published:2003-07-24

关键词: 定向纳米碳管, 微波等离子体化学气相沉积法, 低温, 镍基板

Abstract: In this paper, under the catalytic effect of nickel particles electro-deposited on Ni substrate, self-aligned carbon nanotubes were synthesized by microwave plasma chemical vapor deposition with a mixture of methane and hydrogen gases at 510 ℃. During the process of nanotubes growth, the total pressure in the chamber was kept at 3 kPa, the microwave plasma input power was 500 W, and the flow rates of H2 and CH4 were 50 and 1 mL/min, respectively. The aligned features and hollow structure have been verified by scanning electron and transmission electron microscopic images. As the nanotubes grow, the nickel cap remains on the tip of the carbon nanotubes. The nanotubes′diameter is about 70 nm and they have bamboo structures. Because of the strong etching ability of hydrogen plasma and the low volume ratio of H2/CH4, no carbonaceous particles attached to the carbon nanotubes were found. It demonstrats that MWPCVD is a very efficient process for the synthesis of the aligned carbon nanotubes at a low temperature. The aligned CNTs grown on Ni substrate at such a low temperature are suitable for device fabrication.

Key words: Aligned carbon nanotubes, Microwave plasma chemical vapor deposition, Low temperature, Ni substrate

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