高等学校化学学报

高等学校化学学报 ›› 2011, Vol. 32 ›› Issue (5): 1037.

• 研究论文 • 上一篇    下一篇

NaGdF4:Eu3+/AAO薄膜的制备与表征

王萌1,杨智1,王宇飞1,陶冶2   

  1. 1. 云南师范大学化学化工学院, 昆明 650500; 
    2. 中国科学院高能物理研究所,  北京 100049
  • 收稿日期:2010-08-31 修回日期:2011-01-25 出版日期:2011-05-10 发布日期:2011-04-11
  • 通讯作者: 杨智 E-mail:kmyangz@hotmail.com
  • 基金资助:

    云南省自然科学基金(批准号: 2007B201M)资助.

Preparation and Characterization of NaGdF4∶Eu3+/AAO Thin Films

WANG Meng1, YANG Zhi1*, WANG Yu-Fei1, TAO Ye2   

  1. 1. College of Chemistry and Chemical Engineering,  Yunnan Normal University,  Kunming 650500,    China;
    2. Institute of High Energy Physics, Chinese Academy of Sciences,  Beijing 100049, China
  • Received:2010-08-31 Revised:2011-01-25 Online:2011-05-10 Published:2011-04-11
  • Contact: YANG Zhi E-mail:kmyangz@hotmail.com
  • Supported by:

    云南省自然科学基金(批准号: 2007B201M)资助.

PDF (PC)

摘要： 本文采用水热法在多孔阳极氧化铝（AAO）模板上制备了NaGdF4:Eu3+(5.0 mol%)/AAO薄膜，并研究了制备方法、溶液浓度和退火温度对薄膜样品形貌、结构和发光性质的影响。XRD结果表明：在低于500℃退火，得到具有NaGdF4六方相结构的NaGdF4:Eu3+/AAO薄膜；而在500℃及以上温度退火则得到具有NaGdF4立方相结构的NaGdF4:Eu3+/AAO薄膜。SEM的结果显示：制备方法显著影响NaGdF4:Eu3+/AAO薄膜的形貌，一次水热法只能得到没有特殊形貌的NaGdF4:Eu3+/AAO薄膜，而二次水热法则能得到具有长方体图案的NaGdF4:Eu3+/AAO薄膜；溶液的浓度、退火温度对NaGdF4:Eu3+/AAO薄膜的形貌没有明显的影响。PL的结果表明：具有NaGdF4六方相和立方相结构的NaGdF4:Eu3+/AAO薄膜的特征发射均为Eu3+ 5D0→7F2跃迁发射。

关键词: NaGdF4:Eu3+, 薄膜, AAO模板, 相变, 发光性质

Abstract: NaGdF4:Eu3+/AAO thin films were prepared on porous anodic aluminum oxide (AAO) template surface via a hydrothermal process and the effects of some processing variables such as preparing method, the amount of NaGdF4:Eu3+, annealing temperature, were investigated. The crystal structure, morphology and luminescent properties of the as-prepared NaGdF4:Eu3+/AAO thin films were characterized by X–ray powder diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectra. XRD results show that the phase transition of NaGdF4:Eu3+/AAO thin films from the hexagonal phase to the cubic phase occurs at about 500℃ in air. SEM images indicate that the preparing method influences obviously the morphology of NaGdF4:Eu3+/AAO thin films, NaGdF4:Eu3+/AAO thin films with the rectangle morphology were prepared by a two-step hydrothermal process, and however the one-step hydrothermal process was employed to prepare NaGdF4:Eu3+/AAO thin films without any special morphology. The amount of NaGdF4:Eu3+ in the solution and the annealing temperature do not obviously affect the morphology of NaGdF4:Eu3+/AAO thin films. PL results show that the characteristic emission of NaGdF4:Eu3+/AAO thin films with hexagonal or cubic NaGdF4 structure is Eu3+ 5D0→7F2 transition.

Key words: NaGdF4:Eu3+, Thin film, AAO template, Phase transition, Luminescence

TrendMD: