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半导体纳米材料作为表面增强拉曼散射基底的研究进展

赵冰, 徐蔚青, 阮伟东, 韩晓霞   

  1. 吉林大学超分子结构与材料国家重点实验室, 长春 130012
  • 收稿日期:2008-10-16 修回日期:1900-01-01 出版日期:2008-12-10 发布日期:2008-12-10
  • 通讯作者: 赵冰

Advances in Surface-enhanced Raman ScatteringSemiconductor Substrates

ZHAO Bing*, XU Wei-Qing, RUAN Wei-Dong, HAN Xiao-Xia   

  1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China
  • Received:2008-10-16 Revised:1900-01-01 Online:2008-12-10 Published:2008-12-10
  • Contact: ZHAO Bing

摘要: 在总结半导体纳米材料作为表面增强拉曼散射(SERS)基底的一些相关研究工作的基础上, 讨论了半导体纳米粒子SERS基底的增强效应与纳米材料的种类、尺寸的相关性; 对半峰宽、激发波长进行了分析, 并对半导体纳米材料作为SERS基底时, 化学增强、电磁增强、纳米半导体缺陷和激子波尔半径的影响等进行了阐述.

关键词: 表面增强拉曼散射, 半导体, 基底

Abstract: The advances of surface-enhanced Raman scattering(SERS) on semiconductor substrates, which is also the major research of our group in the past three years, are summarized in this paper. The application of semiductor nanoparticles explored the scope of SERS substrates. Some possible mechanisms different from noble metal substrates were discussed. The major contribution of semiconductor substrates for SERS maybe charge-transfer. Some phenomena, such as nanoparticle size dependence, half-width decrease of spectra, exciting line dependence, were discussed. The possible reasons of chemical enhancement, electromagnetic enhancement, surface defects of semiconductor, exciton Bohr radius were analysed.

Key words: Surface-enhanced Raman scattering(SERS), Semiconductor, Substrate

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