高等学校化学学报

高等学校化学学报 ›› 1992, Vol. 13 ›› Issue (8): 1098.

• 论文 • 上一篇    下一篇

磺化酞菁铜分子膜/SiO2/Si界面电荷转移机制的研究

江雷1, 刘旺1, 王德军1, 李铁津1, 白玉白1, 韩力2, 费浩生2   

  1. 1. 吉林大学化学系, 长春, 130023;
    2. 吉林大学物理系
  • 收稿日期:1991-09-09 出版日期:1992-08-24 发布日期:1992-08-24
  • 通讯作者: 江雷
  • 基金资助:

    国家自然科学基金

A Study of CuTsPc Molecular Film/SiO2/Si Interfacial Charge Transfer Mechanism

JIANG Lei1, Liu Wang1, Wang De-Jun1, Li Tie-Jin1, Bai Yu-Bai1, HAN Li2, FEI Hao-Sheng2   

  1. 1. Department of Chemistry, Jilin University, Changchun, 130023;
    2. Department of Physics, Jilin University
  • Received:1991-09-09 Online:1992-08-24 Published:1992-08-24

PDF (PC)

摘要： 在具有不同氧化层厚度的p型硅基片上修饰2层磺化酞菁铜分子膜.利用时间分辨表面光电压谱技术,对该膜系的界面电荷转移机制的光电开关特性进行了研究。结果表明,用时间分辨表面光电压谱技术研究界面电荷转移过程具有明显优越性.

关键词: 光电压, 电荷转移, 光电开关

Abstract: In this paper,two layers of lipid-free copper tetrasulfonatophthalocyanine(CuTsPc) molecular films were deposited on the surface of p-Si wafers on which the oxided layers with different thickness.Time resolved surface photovoltage technique was used to study the mechanism of the electron transfer process of this system.The samples show the behavior of photo-electronic switch.The results prove that time resolved photovoltage technique is very useful to the study of the interfacial charge transfer process.

Key words: Photovoltage, Charge transfer, Photo-electronic switch

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