基于表面等离子共振效应的有机光敏晶体管

doi:10.7503/cjcu20170377

高等学校化学学报 ›› 2018, Vol. 39 ›› Issue (1): 102.doi: 10.7503/cjcu20170377

基于表面等离子共振效应的有机光敏晶体管

张婵婵^1,², 张方辉¹(), 丁磊¹(), 倪振杰³, 江浪³, 董焕丽³, 张小涛², 李荣金², 胡文平²

1. 陕西科技大学电气与信息工程学院, 陕西省平板显示技术工程研究中心, 西安 710021
2. 天津大学理学院化学系, 天津市分子光电科学重点实验室, 天津 300072
3. 中国科学院化学研究所, 北京分子科学国家实验室有机固体研究室, 北京 100190

收稿日期:2017-06-12 出版日期:2018-01-10 发布日期:2017-12-04
作者简介:联系人简介: 张方辉, 男, 博士, 教授, 主要从事有机电致发光器件和LED研究. E-mail:zhangfanghui@sust.edu.cn; 丁磊, 男, 博士, 副教授, 主要从事有机电子学研究. E-mail:dinglei@sust.edu.cn
基金资助:
国家自然科学基金(批准号: 61674116)、国家重点研究发展计划(批准号: 2016YFA0202300)和陕西省自然科学基金(批准号: 2016JQ6022)资助

Organic Phototransistor Based on Surface Plasmon Resonance Effect^†

ZHANG Chanchan^1,², ZHANG Fanghui^1,^*(), DING Lei^1,^*(), NI Zhenjie³, JIANG Lang³, DONG Huanli³, ZHANG Xiaotao², LI Rongjin², HU Wenping²

1. College of Electrical and Information Engineering, Shaanxi Province Flat Panel Display Technology Engineering Research Center, Shaanxi University of Science & Technology, Xi'an 710021, China
2. Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
3. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

Received:2017-06-12 Online:2018-01-10 Published:2017-12-04
Contact: ZHANG Fanghui,DING Lei E-mail:zhangfanghui@sust.edu.cn;dinglei@sust.edu.cn
Supported by:
† Supported by the National Natural Science Foundation of China(No.61674116), the National Key Basic Research Program of China(No.2016YFA0202300) and the Natural Science Foundation of Shaanxi Province, China(No.2016JQ6022)

摘要/Abstract

摘要：

通过原位制备金纳米颗粒, 利用表面等离子共振效应, 在金纳米颗粒表面旋涂无可见光响应的聚合物获得了同时具有高迁移率(0.12 cm²·V^-1·s^-1)和高响应度(11.6 A/W)的有机光敏晶体管. 金纳米颗粒表面的化学修饰对提高器件性能起到关键作用. 基于表面等离子共振效应建立了一种利用无可见光响应(或弱可见光响应)有机半导体获得高性能有机光敏晶体管的方法.

关键词: 金纳米颗粒, 表面等离子共振, 有机光敏晶体管, 光响应

Abstract:

Photoresponsive organic field-effect transistors(PhotOFET) require materials with high mobility, high absorbance and high exciton dissociation efficiency. Although great efforts have been made to realize high performance PhotOFET using various organic small molecules and polymeric semiconductors, both the responsivity and mobility were still low based on pristine materials. In this work, gold nanoparticles(Au NPs) were incorporated into the semiconductor layer of OFET. Owing to the surface plasmon effect of the Au NPs, the absorbance of the semiconductor could be greatly increased and high-performance PhotOFET were realized. Au NPs were prepared in situ on the substrates and used to fabricate PhotOFET directly. By utilizing the surface plasmon resonance effect of the Au NPs, high performance PhotOFET with a mobility of 0.12 cm²·V^-1·s^-1 and a responsivity of 11.6 A/W was obtained based on the materials without photoresponse in the visible spectrum. The surface chemical modification of gold nanoparticles with alkane thiol played a key role in improving the device performance. The device structure proposed here, i. e. the incorporation of Au NPs into the semiconductor layer of OFETs, provided an effective method for the construction of high performance PhotOFET based on common organic semiconductors.

Key words: Gold nanoparticles, Surface plasma resonance, Organic phototransistor, Photoresponse

中图分类号:

O649

TrendMD:

张婵婵, 张方辉, 丁磊, 倪振杰, 江浪, 董焕丽, 张小涛, 李荣金, 胡文平. 基于表面等离子共振效应的有机光敏晶体管. 高等学校化学学报, 2018, 39(1): 102.

ZHANG Chanchan, ZHANG Fanghui, DING Lei, NI Zhenjie, JIANG Lang, DONG Huanli, ZHANG Xiaotao, LI Rongjin, HU Wenping. Organic Phototransistor Based on Surface Plasmon Resonance Effect^†. Chem. J. Chinese Universities, 2018, 39(1): 102.

图/表 11

Fig.1 Chemical structure of IIDDT

Fig.2 AFM image(A) and diameter distribution(B) of the Au nanoparticles

Fig.3 AFM images of IIDDT films spin-coated by trichloroethylene solution(4 mg/mL)(A) Unannealed; (B) annealed.

Fig.4 AFM images of the IIDDT films spin-coated with Au NPs(A), C6 SAM-Au NPs(B), C8 SAM-Au NPs(C) and C11 SAM-Au NPs(D)

Fig.5 X-ray diffraction patterns of the IIDDT film(a), Au nanoparticles(b) and IIDDT film with Au nanoparticles(c)

Fig.6 Schematic structure of OFET device(A), transfer(B) and output(C) characteristics of OFET with IIDDT as the semiconductorVG/V: a. -10; b. -20; c. -30; d. -40; e. -50; f. -60.

Fig.7 Schematic diagram of PhotOFET with Au NPs(A) and transfer curves of PhotOFET under white light irradiation(80 μW/cm2) with different semiconductor layers(B)a. C6 SAM-Au NPs; b. C8 SAM-Au NPs; c. C11 SAM-Au NPs; d. Au NPs.

Fig.8 Transfer(A) and output characteristics of PhotOFET with C6 SAM-Au NPs in the dark(B) and under white light irradiation with 80 μW/cm2(C)VG/V: a. -20; b. -30; c. -40; d. -50; e. -60; f. -70; g. -80.

Table 1 PhotOFETs property based on polymer semiconductors

Semiconductor	Structure (Dielectric)	Mobility/ (cm²·V^-1·s^-1)	Responsivity/ (A·W^-1)	Intensity/ (mW·cm^-2)	I_d,ph/I_d,dark	Ref.
P3OT	BG/TC(PVA)	10^-3—10^-4	1	1	10²—10³	[9]
P3HT	BG/TC(PVA)	2.6×10^-3	NA^*	1	NA^*	[10]
F8T2	BG/BC(SiO₂)	1.2×10^-4	18.5	1	ca. 10²	[15]
TA-PPE	BG/TC(SiO₂)	NA	0.036	1	3.3×10³	[17]
IIDDT	BG/TC(SiO₂)	0.12	11.6	0.08	700	This work

Fig.9 Photoswitch properties(A) and photocurrent change(B) of the PhotOFETa. IIDDT; b. bare-Au NPs; c. C11 SAM-Au NPs; d. C8 SAM-Au NPs; e. C6 SAM-Au NPs.

Fig.10 UV-Vis absorption spectra at different semiconductor layersa. IIDDT; b. Au NPs; c. Au NPs-IIDDT; d. C6 SAM-Au NPs; e. C8 SAM-Au NPs; f. C11 SAM-Au NPs.

参考文献 28

[1]	Narayan K. S., Kumar N., Appl. Phys. Lett., 2001, 79(12), 1891—1893
[2]	Arias A. C., Mackenzie J. D., Mcculloch I., Rivnay J., Salleo A., Chem. Rev., 2010, 110(1), 3—24
[3]	Lei T., Wang J. Y., Pei J., Acc. Chem. Res., 2014, 47(4), 1117—1126
[4]	Reichmanis E., Katz H., Kloc C., Maliakal A., Bell Labs Tech. J., 2005, 10(3), 8—105
[5]	Facchetti A., Yoon M. H., Marks T., Adv. Mater., 2010, 17(14), 1705—1725
[6]	Yang F., Shtein M., Forrest S. R., Nature, 2004, 428(6986), 911—918
[7]	Wang C., Dong H., Hu W., Liu Y., Zhu D., Chem. Rev., 2012, 112(4), 2208—2267
[8]	Li R., Hu W., Liu Y., Zhu D., Acc. Chem. Res., 2010, 43(4), 529—54
[9]	Marjanovic N., Photoresponsive Organic Field Effect Transistor, VDM Verlag Dr. Müller Aktiengesellschaft & Co. KG, Austria, 2008, 383—475
[10]	Ma X. Y., Yang J. M., Cai W. S., Zhu G. D., Liu J. Y., Chem. Res. Chinese Universities, 2016, 32(4), 702—708
[11]	Narayan K. S., Kumar N., Appl. Phys. Lett., 2001, 79(12), 1891—1893
[12]	Dutta S., Narayan K. S., Synth. Met., 2004, 146(3), 321—324
[13]	Tanusri P., Arif M., Saiful I. K., Nanotechnology, 2010, 21(32), 325201—325205
[14]	Wasapinyokul K., Milne W. I., Chu D. P., J. Appl. Phys., 2009, 105(2), 024509—024517
[15]	Hamilton M. C., Kanicki J., IEEE J. Sel. Top. Quant., 2004, 10(4), 840—848
[16]	Hamilton M. C., Martin S., Kanicki J., IEEE T. Electron. Dev., 2004, 51(6), 877—885
[17]	Wang X., Wasapinyokul K., Tan W. D., Rawcliffe R., Campbell A. J., Bradley D. D. C., J. Appl. Phys., 2010, 107(2), 599—602
[18]	Xu Y., Berger P. R., Wilson J. N., Bunz U. H. F., Appl. Phys. Lett., 2004, 85(18), 4219—4221
[19]	Dong H., Li H., Wang E., Nakashima H., Torimitsu K., Hu W., J. Phys. Chem. C, 2010, 112(49), 19690—19693
[20]	Zakaria R., Lin W. K., Lim C. C., Appl. Phys. Exp., 2012, 5(8), 082002—082005
[21]	Liu Y., Cheng R., Liao L., Zhou H. L., Bai J. W., Liu G., Liu L. X., Huang Y., Duan X. F., Nat. Commun., 2011, 2(1), 579—583
[22]	Green M. A., Pillai S., Nat. Photon, 2012, 6(3), 130—132
[23]	Ferry V. E., Munday J. N., Atwater H. A., Adv. Mater., 2010, 22(43), 4794—4808
[24]	Atwater H. A., Polman A., Nat. Mater., 2010, 9(3), 205—213
[25]	Wu X. L., Liu L. L., Xie Z. Q., Ma Y. G., Chem. J. Chinese Universities, 2016, 37(3), 409—425
	(吴小龑, 刘琳琳, 解增旗, 马於光.高等学校化学学报, 2016, 37(3), 409—425)
[26]	Lei T., Cao Y., Fan Y. L., Liu C. J., Yuan S. C., Pei J., J. Am. Chem. Soc., 2011, 133(16), 6099—6101
[27]	Feng H. Y., Gao L., Ye X. H., Wang L., Xue Z. C., Kong J. M., Li L. Z., Chem. Res. Chinese Universities, 2017, 33(2), 155—159
[28]	Green M. A., Pillai S., Nat. Photon., 2012, 6(3), 130—132

基于表面等离子共振效应的有机光敏晶体管

Organic Phototransistor Based on Surface Plasmon Resonance Effect^†

RichHTML

PDF (PC)

可视化

被引次数

摘要/Abstract

引用本文

使用本文

图/表 11

参考文献 28

相关文章 15

编辑推荐

Metrics

本文评价

[1]	刘苏毓, 丁飞, 李茜, 樊春海, 冯景. 偶氮苯类DNA纳米机器[J]. 高等学校化学学报, 2022, 43(8): 20220122.
[2]	葛浩英, 杜健军, 龙飒然, 孙文, 樊江莉, 彭孝军. 功能化金纳米材料在肿瘤诊疗中的研究与应用[J]. 高等学校化学学报, 2021, 42(4): 1202.
[3]	桂晨, 王颢霖, 邵柏璇, 杨育景, 徐光青. 熔盐辅助法制备g-C₃N₄纳米结构及其光催化制氢性能[J]. 高等学校化学学报, 2021, 42(3): 827.
[4]	黄云帅, 杨霓, 吴泽宏, 吴思. 利用光响应钌配合物的动态配位键调控表面功能[J]. 高等学校化学学报, 2020, 41(6): 1174.
[5]	白翠婷, 岳仁叶, 罗列高, 马楠. 基于双色荧光传感器的癌细胞成像及microRNA定量检测[J]. 高等学校化学学报, 2020, 41(6): 1252.
[6]	梁东磊, 宋秋生, 姚玉田, 刘贲. 上转换荧光响应性复合纳米凝胶的制备及荧光能量传递行为[J]. 高等学校化学学报, 2019, 40(3): 583.
[7]	赵瑞阳, 于春燕, 韩吉姝, 傅云磊, 李明, 胡德华, 刘福胜. 电化学沉积制备光响应聚合物薄膜及其光信息存储应用[J]. 高等学校化学学报, 2019, 40(2): 358.
[8]	李志明, 丁强, 谷晓俊, 辛红, 白炳莲, 李敏. 含偶氮苯基元联酰胺衍生物的有机凝胶和光响应性质[J]. 高等学校化学学报, 2017, 38(9): 1695.
[9]	滕小波, 张春霞, 张颖. 负载金纳米粒子的聚苯乙烯/聚丙烯酸微球的合成及pH响应性能[J]. 高等学校化学学报, 2016, 37(8): 1509.
[10]	严超, 肖玉龙, 戴衡, 程晓红. 对称偶氮苯的合成及性质[J]. 高等学校化学学报, 2016, 37(3): 475.
[11]	蒋红波, 龚成斌, 王强, 唐倩, 马学兵. 基于氨基偶氮苯的光和pH响应聚[(三甲基丙烯酸乙酯胺)₈-(4-氨基-4'-甲基丙烯酰胺基偶氮苯)₁](T₈A₁)的合成与表征[J]. 高等学校化学学报, 2014, 35(9): 2043.
[12]	向军, 张雄辉, 叶芹, 李佳乐, 沈湘黔. Fe-Ni/C复合纳米纤维的原位制备与微波吸收性能[J]. 高等学校化学学报, 2014, 35(7): 1379.
[13]	樊冬丽, 翟岩, 张妍, 涂伟, 黄耀东. 光响应偶氮苯类小分子凝胶因子的合成及性能[J]. 高等学校化学学报, 2014, 35(11): 2447.
[14]	李广, 陈龙聪, 陈萌梦, 高斌, 熊兴良. 基于金纳米颗粒生长的液晶生物传感器检测酪氨酸[J]. 高等学校化学学报, 2013, 34(11): 2493.
[15]	高超, 杨瑜珠, 张广播, 彭敬东, 唐倩, 龚成斌. 光响应性有机-无机杂化分子印迹聚合物的制备及表征[J]. 高等学校化学学报, 2012, 33(12): 2801.

基于表面等离子共振效应的有机光敏晶体管

Organic Phototransistor Based on Surface Plasmon Resonance Effect†

RichHTML

PDF (PC)

可视化

被引次数

摘要/Abstract

引用本文

使用本文

图/表 11

参考文献 28

相关文章 15

编辑推荐

Metrics

本文评价

Organic Phototransistor Based on Surface Plasmon Resonance Effect^†