Back Incident Au/TiO2/Au Schottky Junction Ultraviolet Detector

doi:10.7503/cjcu20130612

Abstract

Abstract:

Rutile phase TiO₂ nanowire arrays were prepared on F:SnO₂(FTO) substrate via a low temperature hydrothermal method and characterized by means of X-ray diffraction(XRD) and scanning electron microscopy(SEM). Then back incident ultraviolet photodetectors of Au/TiO₂/Au structure were fabricated by traditional photo-lithography technique and magnetron sputter plating. At 2.0 V bias, a very low dark current of 3.5 nA is achieved due to the back-to-back structure of the device. Under the irradiation of 360 nm UV-light, the photocurrent can reach 704 nA. The maximum responsibility is up to 0.162 A/W at 360 nm, corresponding to a quantum efficiency of 56.2%.

Key words: Ultraviolet detector, TiO₂ nanowire array, Hydrothermal method, Schottky junction

CLC Number:

O614.41
O646

TrendMD:

LIU Guo-Hua, GU Xue-Hui, LI Hai-Long, GUO Wen-Bin, ZHANG Xin-Dong. Back Incident Au/TiO₂/Au Schottky Junction Ultraviolet Detector[J]. Chem. J. Chinese Universities, 2013, 34(9): 2034.

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Back Incident Au/TiO₂/Au Schottky Junction Ultraviolet Detector

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