Chem. J. Chinese Universities

• 研究论文 • Previous Articles     Next Articles

Effect of Anneal on the Properties of MgxZn1-xO Thin Films Deposited by Metal-organic Chemical Vapor Deposition

DONG Xin1, ZHU Hui-Chao2, ZHANG Bao-Lin2, LI Xiang-Ping2, DU Guo-Tong1,2*   

    1. School of Physics and Optoelectronics Technology, Dalian University of Technology, Dalian 116023, China;
    2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2006-12-25 Revised:1900-01-01 Online:2007-09-10 Published:2007-09-10
  • Contact: DU Guo-Tong

Abstract: High-quality MgxZn1-xO thin films were grown at 610 ℃ on c-sapphire substrates by metal-orga-nic chemical vapor deposition (MOCVD). To research the effect of anneal on the characteristics of MgxZn1-xO, MgxZn1-xO were annealed in vacuum and oxygen for 1 h, respectively. We can find the (002) peaks of the samples which were annealed in vacuum and oxygen are both enhanced, especially in oxygen measured by XRD. From the PL spectrum, the UV emission peak of the sample annealed in vacuum increase clearly and deep-level emission peak minish. The UV emission of the sample annealed in oxygen weakened and the deep-level emission peak enhanced remarkably due to the concentration of vacancy oxygen. It is shown that anneal can regulate the crystal, optical and electrical qualities of MgxZn1-xO film.

Key words: MgxZn1-xO, MOCVD, XRD, PL, AFM, Annealing

CLC Number: 

TrendMD: