Preparation of SnO2/MCM-41 Semiconducter Sensors with MOCVD and Their Properties

Chem. J. Chinese Universities

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Preparation of SnO2/MCM-41 Semiconducter Sensors with MOCVD and Their Properties

LIU Xiu-Li¹, GAO Guo-Hua¹*, KAWI Sibudjing²

1. Shanghai Key Laboratory of Green Chemistry and Chemical Process, Department of Chemistry, East China Normal University, Shanghai 200062, China;
2. Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore 119260, Singapore

Received:2007-01-29 Revised:1900-01-01 Online:2007-09-10 Published:2007-09-10
Contact: GAO Guo-Hua

Abstract

Abstract: SnO₂/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition(MOCVD). The amount of deposition, specific surface area and pore distribution of SnO₂/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO₂ is coated smoothly in the pore of MCM-41. SnO₂/MCM-41 sensor has high sensitivities for CO and H₂. The sensitivities show a linear relation with the concentration of CO and H₂.

Key words: Semiconductor sensor, MCM-41, MOCVD, Tin dioxide, Thin film

CLC Number:

O614

TrendMD:

LIU Xiu-Li¹, GAO Guo-Hua¹*, KAWI Sibudjing². Preparation of SnO2/MCM-41 Semiconducter Sensors with MOCVD and Their Properties[J]. Chem. J. Chinese Universities, doi: .

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Preparation of SnO2/MCM-41 Semiconducter Sensors with MOCVD and Their Properties

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