Chem. J. Chinese Universities ›› 2022, Vol. 43 ›› Issue (4): 20210807.doi: 10.7503/cjcu20210807

• Physical Chemistry • Previous Articles     Next Articles

Planar Pentacoordinate Silicon and Germanium in XBe5H6(X=Si, Ge) Clusters

GUO Jinchang(), LIU Fanglin   

  1. Nanocluster Laboratory,Institute of Molecular Science,Shanxi University,Taiyuan 030006,China
  • Received:2021-11-29 Online:2022-04-10 Published:2022-02-17
  • Contact: GUO Jinchang E-mail:guojc@sxu.edu.cn
  • Supported by:
    the National Natural Science Foundation of China(22173053)

Abstract:

Computational design of ternary XBe5H6(X=Si, Ge) clusters was reported, which were global-minimum structures on the potential energy surfaces, featuring planar pentacoordinate silicon/germanium(ppSi/Ge). XBe5H6 (X=Si, Ge) clusters have the perfect fan-shaped structures: Si/Ge atoms are coordinated by five Be atoms; four H atoms are bonded to Be atoms in bridge mode, and the remaining two H atoms are bonded to Be atoms at both ends. Chemical bonding analyses reveal that the ppSi/Ge core is governed by delocalized 2π/6σ bonding, that is, double π/σ aromaticity, which also makes the Si/Ge atom conform to the octet rule. Additional twelve electrons are contributed to peripheral Be—H—Be and Be—H σ bonding. Energy decomposition analysis-Natural orbital for chemical valence(EDA-NOCV) analyses indicate that there is mainly electron-sharing bonding between the Si/Ge and Be5H6 ligands.

Key words: Planar pentacoordinate silicon, Global minimum structure, Chemical bonding, Double π/σ aromati-city, Eight-electron counting

CLC Number: 

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