Studies on Photoelectrochemical Properties of Porous Silicon

Chem. J. Chinese Universities ›› 1997, Vol. 18 ›› Issue (4): 621.

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Studies on Photoelectrochemical Properties of Porous Silicon

WANG Bao-Hui¹, WANG De-Jun², LI Tie-Jin²

1. Science & Technology ResFarch Institute of Safety Protect ionin Work, Daqing Petroleum Institute, Anda, 151400;
2. Department of Chemistry, Jilin University, Changchun, 130023

Received:1996-07-09 Online:1997-05-24 Published:1997-05-24

Abstract

Abstract: The charge transfer and photoelectric properties of porous silicon were investigat-ed by photoelectrochemical techniques.The results show that the porous silicon fabricated bysingle crystalline p-Si exhibits photoelectric properties of p-type semiconductors with a high-er photocurrent than the original silicon.Due to the unique surface structure, the porous sili-con has a particular photocurrent spectrum.This is attributed to the photocharge-trappingeffect of surface states in the porous silicon.

Key words: Porous silicon, Photocurrent, Photoelectrochemistry, Charge transfer

TrendMD:

WANG Bao-Hui, WANG De-Jun, LI Tie-Jin. Studies on Photoelectrochemical Properties of Porous Silicon[J]. Chem. J. Chinese Universities, 1997, 18(4): 621.

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Studies on Photoelectrochemical Properties of Porous Silicon

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