Chem. J. Chinese Universities ›› 1996, Vol. 17 ›› Issue (6): 838.

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A Technical Design and Experiment of the Chemical Vapor Deposition of AIN Film

XIE Song, LIU Xi, MENG Guang-Yao   

  1. Department of Materials Science and Engineering, University of Science andTechnology of China, Hefei 230026
  • Received:1995-06-22 Online:1996-06-24 Published:1996-06-24

Abstract: Thermodynamic analysis and a technical design and experimental results for the chemical vapor deposition(CVD) of AINfilm from AIBr3-NH3-N2 system are presented.At various deposition temperatures,input gas flow rates and total pressure,the equilibrium partial pressures of the major gaseous species are calculated.The effects of precursor temperature and gas flow rate on the theoretical deposition rate of AINfilm are estimated.And theoretical results are compared with those of the experiments by a microwave plasma CVDof AINthin films.

Key words: Chemical vapor deposition, AIN, Thermodynamic analysis

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