高等学校化学学报

高等学校化学学报 ›› 2011, Vol. 32 ›› Issue (12): 2833.

• 研究论文 • 上一篇    下一篇

反应离子刻蚀和自组装分子膜构建硅基底疏水与超疏水表面

连峰1, 张会臣1, 邹赫麟2, 庞连云1   

  1. 1.  大连海事大学机械工程系, 大连 116026; 
    2.  大连理工大学机械工程学院, 大连 116024
  • 收稿日期:2011-03-18 修回日期:2011-06-08 出版日期:2011-12-10 发布日期:2011-11-25
  • 通讯作者: 连峰 E-mail:fengfeng0425@yahoo.com.cn
  • 基金资助:

    国家自然科学基金(批准号: 50975036)和辽宁省教育厅重点实验室(批准号: 2008S029)资助.

Preparation of Hydrophobic/Superhydrophobic Surface on Silicon Wafer by Reactive Ion Etching and Self-assembled Monolayers

LIAN Feng1*, ZHANG Hui-Chen1, ZOU He-Lin2, PANG Lian-Yun1   

  1. 1. Department of Mechanical Engineering, Dalian Maritime University, Dalian 116026, China;
    2.  School of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China
  • Received:2011-03-18 Revised:2011-06-08 Online:2011-12-10 Published:2011-11-25
  • Contact: LIAN Feng E-mail:fengfeng0425@yahoo.com.cn
  • Supported by:

    国家自然科学基金(批准号: 50975036)和辽宁省教育厅重点实验室(批准号: 2008S029)资助.

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被引次数

22

摘要： 采用反应离子刻蚀技术在Si(100)表面加工微米级圆柱阵列, 采用自组装技术分别制备了3种硅烷自组装分子膜. 结果表明, 采用反应离子刻蚀构建出的4种微米级圆柱阵列结构规整, 其直径为5  μm, 高度为10 μm, 间距为15~45 μm. 沉积自组装分子膜后, 试样表面的水接触角显著增大, 其中沉积1H,1H,2H,2H-全氟癸基三氯硅烷(FDTS)自组装分子膜接触角最大, 1H,1H,2H,2H-全氟辛烷基三氯硅烷(FOTS)次之, 三氯十八硅烷(OTS)最小. 测得的接触角大于150°时接近Cassie方程计算的接触角, 而小于150°时接近Wenzel方程计算的接触角. 改变圆柱阵列的间距和选择不同的自组装分子膜, 可以控制表面接触角的大小. 原子力显微镜(AFM)观测结果显示, 沉积自组装分子膜可以产生纳米级的团簇. 由微米级圆柱阵列和纳米级自组装分子膜构成的表面结构使Si试样表面接触角最大可达156.0°.

关键词: 超疏水, 接触角, 反应离子刻蚀, 自组装分子膜

Abstract: Micro scale pillar arrays on silicon(100) wafer were generated by reactive ion etching.  Three self-assembled monolayers(SAMs) were prepared on etched silicon wafer by self-assembled technique.  The results show that four micro pillar arrays generated by reactive ion etching possess regular structures with diameter of 5 μm, height of 10 μm and spacing of 15—45 μm.  The water contact angles of silicon wafers increase significantly after SAMs deposition, in which maximum contact angle is abtained for 1H,1H,2H,2H-perfluorodecyltrichlorosilane(FDTS) deposition, medium for 1H,1H,2H,2H-perfluorooctyltrichlorosilane(FOTS) deposition and minimum for octadecyltrichlorosilane(OTS) deposition.  The measured contact angles larger than 150°  are close to the contact angles calculated with Cassei model.  However, the measured contact angles less than 150° approach the contact angles calculated with Wenzel model.  Contact angles can be controlled by adjusting spacing of pillar array and choosing different SAMs.  Atomic force microscope(AFM) measurement show that nano scale clusters on silicon wafers appear after SAMs deposition.  Maximum contact angle of 156.0° can be acquired in surface structure with micro pillar array and nano scale SAMs.

Key words: Superhydrophobicity, Contact angle, Reactive ion etching, Self-assembled monolayer

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