高等学校化学学报 ›› 2005, Vol. 26 ›› Issue (10): 1926-1929.

• 研究论文 • 上一篇    下一篇

InxGa1-xAs盖层InAs量子点的发光性能研究

杨景海1,2, 宫杰1,3, 杨丽丽1, 范厚刚1, 赵庆祥4   

  1. 1. 吉林师范大学凝聚态物理研究所,四平136000;
    2. 吉林大学材料科学与技术学院,长春130023;
    3. 长春大学应用力学院,长春130022;
    4. 查尔摩斯技术大学物理学院,哥德堡S2412 96,瑞典
  • 收稿日期:2004-08-15 出版日期:2005-10-10 发布日期:2005-10-10
  • 基金资助:

    吉林省科技发展计划项目(批准号:20020615)资助

Photoluminescence Property of InAs Quantum Dots with InxGa1-xAs Layer Inserted

YANG Jing-Hai1,2, GONG Jie1,3, YANG Li-Li1, FAN Hou-Gang1, ZHAO Qing-Xiang4   

  1. 1. Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China;
    2. College of Materials Science and Engineering,Jinlin University,Changchun 130023,China;
    3. Applied Science and Technolyogy College,Changchun University,Changchun 130022,China;
    4. Department of Physics,Chalmers University,S-41296 Gteborg,Sweden
  • Received:2004-08-15 Online:2005-10-10 Published:2005-10-10

摘要: 用分子束外延系统在GaAs(001)衬底上生长InAs量子点,在InAs量子点上插入3 nm的In0.4Ga0.6As层,可将量子点发射波长调谐到1 300 nm附近.对样品进行氢等离子处理,研究处理前后样品的InAs量子点光致发光(PL)强度的变化.结果表明,在InAs量子点与相邻层的界面上以及GaAs层中存在界面缺陷,采用氢等离子处理可有效地抑制界面缺陷,大幅度地提高发光效率.

关键词: InAs量子点, 界面缺陷, 光致发光

Abstract: InAs quantum dots(QDs) have been grown on the GaAs(001)substrates by the method of molecular beam epitaxy.The emission of InAs QDs can be turned to about 1 300 nm by the introduction of a 10ML In0.4Ga0.6As layer.The photoluminescence of the samples were studied before and after being treated by(hydrogen) plasma.The results show that the enhancement of the PL intensity after H-plasma treatment(depends) on the excitation power,from about a factor of 12 at the low excitation limit to about a factor of 2 at the highest excitation power used in this study,which are probably due to competition between carrier capture by nonradiative centers and InAs QDs.PL intensity variation with the chauge of time and temperature were also investigated,and the results of them clearly illustrate that there indeed exist interface defects,both on the interface(between) the InAs dots and surrounding layers and in the GaAs layers,which can be suppressed heavily by H-treatments so that the PL intensity can be enhanced greatly.

Key words: InAs quantum dots, Interface defects, Photoluminescence

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