高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (3): 484.

• 研究论文 • 上一篇    下一篇

高介电常数TiO2纳米晶的表面态研究

阮圣平1, 董玮1, 吴凤清2, 王兢3, 张歆东1, 赵慕愚2   

  1. 1. 吉林大学电子科学与工程学院;
    2. 吉林大学化学学院, 长春 130023;
    3. 大连理工大学电子工程系, 大连 116023
  • 收稿日期:2003-01-04 出版日期:2004-03-24 发布日期:2004-03-24
  • 通讯作者: 阮圣平(1966年出生),男,博士,副教授,从事电子功能材料与原器件研究.E-mail;xbk@mail.jlu.edu.cn E-mail:xbk@mail.jlu.edu.cn
  • 基金资助:

    国家自然科学基金(批准号;60074031;60277033;59973020)资助

Surface State Studies of Nanocrystalline TiO2 with High Dielectric Constant

RUAN Sheng-Ping1, DONG Wei1, WU Feng-Qing2, WANG Jing3, ZHANG Xin-Dong1, ZHAO Mu-Yu2   

  1. 1. Institute of Electronic Science Engineering, Jilin University, Changchun 130023;
    2. Institute of Chemistry, Jilin University, Changchun 130023;
    3. Department of Electronic Engineering, Dalian University of Technology, Dalian 116023
  • Received:2003-01-04 Online:2004-03-24 Published:2004-03-24

摘要: 将钛酸四丁酯和硬脂酸在熔融状态下混合均匀后置于冷水浴中,使其凝固成凝胶,通过控制烧结过程中氧气的含量,成功地制备出粒度均匀、介电性能好的纳米晶TiO2.通过采用X射线光电子能谱和表面光电压谱对纳米晶TiO2表面状态的分析发现,材料表面存在大量的氧空位缺陷,暴露在粒子表面上的主要是一些金属Ti4+.纳米材料的这种表面状态对其极化性质具有重要的影响,使其在接近静态条件下的低频介电常数远大于常规材料的介电常数.

关键词: 二氧化钛, 纳米晶, 表面态, 介电性能

Abstract: An appropriate amount of stearic acid was melted at 70 ℃, into which tetrabutyl titanate was added while stirring. Then the solution was cooled in cool water to form a gel. By controlling the amount of oxygen during the calcining procedure, nanocrystalline TiO2 powder with even grain size and good dielectric properties were obtained. The surface state was analyzed by means of X-ray photoelectron spectroscopy and surface photovoltage spectroscopy. The results of experiments show that the surface structure of nanocrystalline TiO2 is not integrate mainly due to the existence of oxygen cavities and most of the exposing atoms on the grain surface are Ti4+. The surface states of nanocrystalline materials put important influence on their dielectric properties and make the static state dielectric constant much bigger than that of bulk material.

Key words: TiO2, Nanocrystalline, Surface state, Dielectric property

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