高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (11): 2074-2077.

• 研究论文 • 上一篇    下一篇

ZnO/SiO2的激光诱导发光光谱研究

陈钧, 冯兆池, 应品良, 李灿   

  1. 中国科学院大连化学物理研究所催化基础国家重点实验室, 大连116023
  • 收稿日期:2004-01-12 出版日期:2004-11-24 发布日期:2004-11-24
  • 基金资助:

    国家自然科学基金(批准号:29927003和20273069)资助

Laser-induced Luminescence Spectroscopy of ZnO/SiO2

CHEN Jun, FENG Zhao-Chi, YING Pin-Liang, LI Can   

  1. State Key Laboratory of Catalysis Basis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
  • Received:2004-01-12 Online:2004-11-24 Published:2004-11-24

摘要: 用激光诱导发光光谱技术对一系列不同ZnO担载量的ZnO/SiO2及在不同焙烧气氛下制备的ZnO/SiO2材料进行了深入的研究,发现在空气气氛中焙烧的ZnO/SiO2主要出现ZnO的橙色发光带(中心位于670nm),但在氩气气氛中焙烧制得的样品主要呈现ZnO的绿色发光带(中心位于540nm),且明显观察到橙色发光带和绿色发光带之间的转化.ZnO的可见光区发光带可能是由ZnO中的氧缺陷引起的,高浓度的氧缺陷引发绿色发光带,而低浓度的氧缺陷引发橙色发光带.结果表明,激光诱导发光光谱是一种表征缺陷的有力工具,常规表征技术很难对材料的缺陷状态进行表征.XRD衍射图谱表明,样品中ZnO是以纤锌矿结构存在的,紫外-可见漫反射光谱和拉曼光谱显示,ZnO主要以大颗粒状态覆盖在SiO2表面上.

关键词: 激光诱导发光光谱, ZnO, 氧缺陷, 绿色发光带, 橙色发光带

Abstract: ZnO/SiO2 materials with different ZnO loadings were prepared by incipient wetness impregnation method in different calcination atmospheres. A home-built laser-induced luminescence spectroscopy setup was applied to studying the luminescent behavior of these materials. The continuous wave He-Cd laser(λ=325 nm) was used as the excitation source. It is found that the samples calcined in air mainly show the orange luminescence band(centered at about 670 nm), but the samples calcined in Ar mainly exhibit the green luminescence band(centered at about 540 nm). Interestingly, the orange luminescence band is changed into the green luminescence band after the ZnO/SiO2 was treated in air and calcined in Ar again, and the green luminescence band is changed into the orange luminescence band after the ZnO/SiO2 was treated in Ar and further calcined in air. These results suggest that the visible luminescence bands of ZnO are ascribed to the oxygen vacancies in ZnO. The green luminescence band is ascribed to the state with a high density of oxygen vacancies; and the orange luminescence band is attributed to the state with less oxygen vacancies. The XRD patterns show that ZnO in these materials exists as a wurtzite structure. UV-Vis and Raman spectra indicate that most ZnO is formed in the form of macrocrystal on SiO2. Our results also demonstrate that the laser-induced luminescence spectroscopy is a powerful technique to characterize the defect sites, particularly the oxygen deficient in semiconductor materials.

Key words: Laser induced luminescence spectroscopy, ZnO, Oxygen vacancy, Green band, Orange band

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