高等学校化学学报 ›› 2023, Vol. 44 ›› Issue (12): 20230372.doi: 10.7503/cjcu20230372

• 物理化学 • 上一篇    下一篇

基于不同π核扩展方式萘四甲酰基二酰亚胺有机半导体电荷传输性质的理论研究

潘佳峥1, 孙晓琦1, 任爱民2, 郭景富1()   

  1. 1.东北师范大学物理学院, 长春 130024
    2.吉林大学化学学院, 理论化学研究所, 长春 130021
  • 收稿日期:2023-08-17 出版日期:2023-12-10 发布日期:2023-10-08
  • 通讯作者: 郭景富 E-mail:guojf217@nenu.edu.cn
  • 作者简介:第一联系人:共同第一作者.
  • 基金资助:
    国家自然科学基金(21473071)

Theoretical Study of the Charge Transport Properties of Naphthalene Tetracarboxylic Diimide Organic Semiconductors Based on Different π-Core Extensions

PAN Jiazheng1, SUN Xiaoqi1, REN Aimin2, GUO Jingfu1()   

  1. 1.School of Physics,Northeast Normal University,Changchun 130024,China
    2.Institute of Theoretical Chemistry,College of Chemistry,Jilin University,Changchun 130021,China
  • Received:2023-08-17 Online:2023-12-10 Published:2023-10-08
  • Contact: GUO Jingfu E-mail:guojf217@nenu.edu.cn
  • Supported by:
    the National Natural Science Foundation of China(21473071)

摘要:

n型半导体材料在逻辑互补电路中必不可少, 但由于多数n型有机半导体材料空气稳定性差、 迁移率较低, 其发展相对滞后. 本文基于几种典型的不同π核扩展的萘四甲酰基二酰亚胺(NDI)有机半导体材料, 利用第一性原理计算分析了其电荷传输性质, 分别从单分子结构特征、 分子间堆积方式以及分子间相互作用等方面阐明不同核心结构对载流子传输性质的影响. 结果表明, 所研究分子均具有良好的空气稳定性, 并表现为电子传输性. 其中, 长轴π扩展的分子A2具有较高的电子亲和势, 其空气稳定性最好. 其次, 沿长轴/短轴π扩展的NDI有机半导体的重组能均降低, 但二者重组能降低的起因明显不同: 相比于A1分子, 沿短轴π扩展的A2分子在高频区的振动受到有效的抑制, 从而重组能大幅下降; 而沿长轴π扩展的A3与A4分子则在高低频区的振动均受到抑制, 使重组能降低. 另外, 不同的分子堆积对传输影响较大, 发现沿长轴π扩展的A3和A4具有较小的短轴滑移, 表现为二维传输材料, 二维平均电子迁移率分别约为0.06与0.15 cm2·V‒1·s‒1; 沿短轴π扩展的A2分子具有较大的短轴滑移, 因此表现为一维传输材料, 其一维电子迁移率高达0.96 cm2·V‒1·s‒1.

关键词: 有机半导体, 电荷传输性质, 电子迁移率, 分子堆积模式, 分子间相互作用

Abstract:

n Type organic semiconductor materials(OSCs) are essential in logic complementary circuits, but their related development has lagged behind relatively due to their poor air stability and low mobility. In this work, the charge transport properties of several typical n type OSCs naphthalene tetracarboxylic diimide(NDI) based on different π-core extensions were analyzed by first principles simulation to elucidate the charge transport properties in term of the single-molecule structural features, intermolecular stacking modes, and intermolecular interactions, respectively. The results show that all of the studied molecules also have good air stability and exhibit electron transport properties. Among them, A2 with a long axis π extension has a high electron affinity(EA) and the best air stability. Secondly, compared to NDI molecule, the reorganization energies of the NDI organic semiconductors with the long-axis/short-axis π-extension were all reduced, but the origin for their decreased reorganization energy were found to be distinctly different according to the normal modes analysis. Compared to the A1 molecule, the vibrations of the A2 with the short axis π extension was effectively suppressed in the high-frequency region, whereas the vibrations of the A3 and A4 molecules extended along the long axis were suppressed in both the high and low-frequency regions, resulting in a reduction of the reorganization energy. Finally, the nearest-neighbour dimer stacking of studied molecular crystals was analyzed, and it was found that A3 and A4 have small short-axis sliping and behave as 2D electron transport materials, with 2D average electron mobility of ca. 0.06 and 0.15 cm2·V‒1·s‒1, respectively; while A2 has larger short-axis slip and thus behaves as 1D transport materials, with their 1D electron mobility as high as 0.96 cm2·V‒1·s‒1. In this paper, the relationship between molecular structure-molecular stacking patterns-electron transport properties of several typical n type OSCs NDI with different core structures was analyzed through theoretical computational simulations, which provides useful design ideas for the design of stable high-performance electron transport materials.

Key words: Organic semiconductor, Charge transport property, Electron mobility, Molecular stacking pattern, Intermolecular interaction

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