Controlled Fabrication and Spectral Characterization of InSb Nanowire Arrays†

doi:10.7503/cjcu20130620

Abstract

Abstract:

Zinc-blende-type InSb nanowire arrays with different growth orientations were synthesized in porous anodic alumina membrane by pulse electrodeposition. It is found that the growth orientation of InSb nanowires changes from [400] to [220] direction by controlling the concentration of sodium dodecyl sulfate(SDS) in the electrolyte. The phases and microstructure of the obtained nanowires were analyzed using powder X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy. The laser Raman spectra of the InSb nanowire arrays grown along different directions show distinctly different Raman features. Compared with the bulk materials, the phonon scattering peaks of the InSb nanowire arrays are severely red-shifted while its corresponding absorption band is blue-shifted.

Key words: InSb, Nanowire, Raman spectrum, Infrared absorbance spectrum

CLC Number:

O614
O644

TrendMD:

YANG Youwen, ZHU Wenbin, LI Tianying, MA Dongming, CHEN Dong. Controlled Fabrication and Spectral Characterization of InSb Nanowire Arrays^†[J]. Chem. J. Chinese Universities, 2014, 35(3): 466.

Figures/Tables 4

Fig.1 XRD patterns of InSb nanowire arraysa. Sample 1; b. sample 2; c. sample 3.

Fig.2 SEM images(A, B) of InSb nanowire arrays, TEM(C) and HRTEM(D) image of InSb nanowire (A) Sample 2; (B)—(D) sample 3. The inset in (C) shows the SAED pattern of sample 3.

Fig.3 Raman spectra of InSb nanowire arrays a. Sample 1; b. sample 2; c. sample 3.

Fig.4 IR absorption spectra of InSb nanowire arrays with different growth direction The inset is the plot of (Ahv)2 vs. hv. a. Sample 1; b. sample 3.

References 25

[1]	Aella P., Ingole S., Petuskey W. T., Picraux S. T., Adv. Mater., 2007, 19(18), 2603—2607
[2]	Lugstein A., Steinmair M., Hyun Y. J., Hauer G., Pongratz P., Bertagnolli E., Nano lett., 2008, 8(8), 2310—2314
[3]	Mori S., Morioka N., Suda J., Kimoto T., IEEE Trans. Electron Devices,2013, 60(3), 944—950
[4]	Huang X., Li L., Luo X., Zhu X., Li G., J. Phys. Chem. C,2008, 112(5), 1468—1472
[5]	Huang G. F., Huang W. Q., Wang L. L., Zou B. S., Pan A., J. Magn. Magn. Mater., 2012, 324(23), 4043—4047
[6]	Alam K., Sajjad R. N., IEEE Trans. Electron Devices,2010, 57(11), 2880—2885
[7]	Liang Y., Xu H. Y., Hark S. K., J. Phys. Chem. C,2010, 114(18), 8343—8347
[8]	Ashley T., Dean A. B., Elliott C. T., Pryce G. J., Johnson A. D., Willis H., Appl. Phys. Lett., 1995, 66(4), 481—483
[9]	Mohammad A., Das S. R., Khan M. R., Alam M. A., Janes D. B., Nano Lett., 2012, 12(12), 6112—6118
[10]	Zhang X., Hao Y., Meng G., Zhang L., J. Electrochem. Soc., 2005, 152(10), C664—C668
[11]	Paul R. K., Penchev M., Zhong J., Ozkan M., Ghazinejad M., Jing X., Ozkan C. S., Mater. Chem. Phys., 2010, 121(3), 397—401
[12]	Ye Q. L., Yamada T., Liu H., Scheffler R., Mingo N., Leverenz R., Mater. Res. Soc. Symp. Proc., San Francisco, California USA,2006, 940
[13]	Wang Y., Chi J., Banerjee K., Grützmacher D., Schäpers T., Lu J. G., J. Mater. Chem., 2011, 21(8), 2459—2462
[14]	Yang Y. W., Li L., Huang X. H., Zhang L., J. Mater. Sci., 2007, 42(8), 2753—2757
[15]	Wen G. H., Ren F. X., Deng Y. F., Zhao Q., Zou G. T., Chem. J. Chinese Universities,2006, 27(9), 1708—1710
	(温戈辉, 任方星, 邓永峰, 赵强, 邹广田. 高等学校化学学报, 2006, 27(9), 1708—1710)
[16]	Huang X. H., Li G. H., Sun G. Z., Dou X. C., Li L., Zheng L. X., Nanoscale Research Lett., 2010, 5(6), 1057—1062
[17]	Tian M., Wang J., Kurtz J., Mallouk T. E., Chan M. H. W., Nano Lett., 2003, 3(7), 919—923
[18]	Wagner V., Drews D., Esser N., Zahn D. R. T., Geurts J., Richter W., J. Appl. Phys., 1994, 75(11), 7330—7333
[19]	Ersching K., Campos C. E. M., de Lima J. C., Grandi T. A., Souza S. M., Pizani P. S., Mater. Chem. Phys., 2010, 122(2/3), 528—532
[20]	He Y. L., Sun Q., Laser & Infrared,2005, 35(9), 668—669
	(何焰蓝, 孙全. 激光与红外, 2005, 35(9), 668—669)
[21]	Xu G. Y., Wang T. M., Wang J. L., Journal of Lanzhou University(Natural Sciences), 2000, 36(5), 47—53
	(徐刚毅, 王天民, 王金良. 兰州大学学报: 自然科学版, 2000, 36(5), 47—53)
[22]	Zhang X., Hao Y., Meng G., Zhang L., J. Electrochem. Soc., 2005, 152(10), C664—C668
[23]	Zhitomirsky V. N., Çetinörgü E., Boxman R. L., Goldsmith S., Thin Solid Films,2008, 516(15), 5079—5086
[24]	Chen H., Sun X., Lai K.W., Meyyappan M., Xi N., IEEE Nanotechnology Materials and Devices Conference, Traverse City, MI, 2009, 212—216
[25]	Sanguinetti S., Gurioli M., Grilli E., Guzzi M., Henini M., Appl. Phys. Lett., 2000, 77(13), 1982—1984