Synthesis of Ordered Mesoporous TiN Powder via Ammonia Reduction Nitridation Reaction and Its Electrochemical Performance†

doi:10.7503/cjcu20160572

Abstract

Abstract:

The ordered mesoporous TiN powder was synthesized by reduction-nitridation method based on the nonhydrolytic sol-gel process using titanium tetrachloride as the raw material, P123 as the structure-directing agent and cyanamide as the stabilizer. The structural information of the composite powder was characterized by wide-angle/small-angle X-ray diffraction, scanning electronic microscopy, N₂ adsorption-desorption analysis, and the electrochemical properties were characterized by cyclic voltammetry(CV) and galvanostatic charge-discharge(GCD) measurements. The results show that the synthesized TiN powder was highly pure cubic TiN phase and had ordered mesoporous structure, its specific surface area was 97 m²/g. The CV curves at different scan rates look like the rectangle. The specific capacitance was 233 F/g at current density of 50 mA/g, and remained 90% even after 2000 cycles. When the power density was 0.1 kW/kg, the energy density was as high as 65 W·h/kg.

Key words: Titanium nitride powder, Ordered mesopore, Nonhydrolytic sol-gel, Reduction-nitridation, Electrochemistry

CLC Number:

O614.41
O646

TrendMD:

NI Jie, WEI Hengyong, BU Jinglong, LIU Huixing, CUI Yi, LÜ Dongfeng, WEI Yingna, ZHANG Lifang. Synthesis of Ordered Mesoporous TiN Powder via Ammonia Reduction Nitridation Reaction and Its Electrochemical Performance^†[J]. Chem. J. Chinese Universities, 2017, 38(3): 355.

Figures/Tables 11

Fig.1 XRD pattern of TiN powder

Fig.2 SEM images of TiN powders with different magnifications(A, C, D) and EDS pattern(B) of TiN powder

Fig.3 TEM image and SAED pattern(inset) of TiN powder

Fig.4 Nitrogen adsorption-desorption isotherms(A) and pore-size distribution(B) of TiN powder

Fig.5 Small angle XRD pattern of TiN powder

Fig.6 CV curves collected at different scan rates for the TiN‖TiN devices Scan rate/(mV·s-1): a. 5; b. 10; c. 20; d. 50; e. 100; f. 200.

Fig.7 Capacitance retention of TiN‖TiN devices with increasing the scan rate

Fig.8 Galvanostatic charge/discharge curves of TiN‖TiN devices Current density/(mA·g-1): a. 50; b. 100; c. 200; d. 500.

Fig.9 Cycling performance of TiN‖TiN devices at a current density of 50 mA/g for 2000 cycles

Fig.10 Impedance spectrum of TiN‖TiN devices

Fig.11 Ragone plot of TiN‖TiN devices

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