Investigation on Stability of Perovskite Semiconductor CH3NH3PbI3 by In-situ FTIR Spectroscopy†

doi:10.7503/cjcu20160179

Abstract

Abstract:

Perovskite hybrid semiconductors CH₃NH₃PbX₃(X=Cl, Br, I) have attracted much interests of the chemists and material scientists due to their advantages including facile preparation, low cost and excellent optoelectronic properties. However, the poor stability of these hybrid semiconductors severely frustrated their practical applications, thus it is very important to investigate their decomposition process and explore the new route to improve their stability. Here we investigated the thermal decomposition process of CH₃NH₃PbI₃ using an in-situ Fourier transformation infrared(FTIR) spectrometer. It was found that the stability of CH₃NH₃PbI₃ was rather sensitive to the existence of oxygen, it began to decompose at 150 ℃ when 1%(volume fraction) oxygen was introduced into the nitrogen atmosphere. In comparison, its decomposition temperature strikingly increased to 250 ℃ when it was heated in pure nitrogen of atmospheric pressure. It was rather surprising that the decomposition temperature of CH₃NH₃PbI₃ further increased to 270 ℃ when the pressure of nitrogen increased to 4.0 MPa. This phenomenon reveals that the thermal stability of CH₃NH₃PbX₃ should be greatly improved by applying an even high pressure, thus the post-treatment of photovoltaic devices could be performed at much higher temperature and even better performance can be anticipated.

Key words: Perovskite, Hybrid semiconductor, Stability, In-situ Fourier transformation infrared spectroscopy

CLC Number:

TrendMD:

LIU Yang, FU Xianwei, ZHAO Tianyu, LIAN Gang, DONG Ning, SONG Side, WANG Qilong, CUI Deliang. Investigation on Stability of Perovskite Semiconductor CH₃NH₃PbI₃ by In-situ FTIR Spectroscopy^†[J]. Chem. J. Chinese Universities, 2016, 37(9): 1605.

Figures/Tables 5

Fig.1 Schematic diagram of in situ FTIR spectroscopy equipment (A) Diffusive reflection cell; (B) high temperature high pressure(HTHP) cell.

Fig.2 In situ FTIR spectra collected when heating CH3NH3PbI3 in nitrogen containing 1%(A), 5%(B), 10%(C), 15%(D) and 21%(E) O2 Temperature/℃: (A) a—i: 30, 140, 150, 160, 170, 180, 190, 200, 250; (B) a—n: 22, 120, 140, 150, 160, 180, 190, 200, 210, 220, 230, 240, 250, 260; (C) a—i: 30, 120, 125, 130, 140, 150, 160, 200, 250; (D) a—j: 30, 100, 110, 120, 130, 140, 150, 160, 200, 250; (E) a—j: 30, 80, 100, 110, 120, 130, 140, 150, 180, 200.

Fig.3 XRD patterns of PbI2(a), I2(b), CH3NH3PbI3(c) and the sample prepared by heating CH3NH3PbI3 at 110 ℃ in synthetic air(d)

Fig.4 In situ FTIR spectra collected when heating CH3NH3PbI3 in N2 under atmospheric pressure Temperature/℃: a—i: 30, 200, 230, 250, 260, 270, 280, 300, 30(CH3NH3I).

Fig.5 In situ FTIR spectra collected when heating CH3NH3PbI3 in N2 under pressure of 2.0 MPa(A) and 4.0 MPa(B) Temperature/℃: (A) a—i: 30, 150, 200, 230, 250, 260, 280, 300, 30(CH3NH3I);(B) a—i: 30, 200, 250, 260, 270, 280, 290, 300, 30(CH3NH3I).

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Investigation on Stability of Perovskite Semiconductor CH₃NH₃PbI₃ by In-situ FTIR Spectroscopy^†

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