Photoluminescence Efficiency from InAs Quantum Dots

Abstract

Abstract: InAs quantum dots(QDs) were investigated by using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm². The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure.

Key words: InAs, Quantum dots, Photoluminescence efficiency

CLC Number:

O324

TrendMD:

YANG Jing-Hai, GONG Jie, LIU Wei, FAN Hou-Gang, YANG Li-Li, ZHAO Qing-Xiang . Photoluminescence Efficiency from InAs Quantum Dots[J]. Chem. J. Chinese Universities, 2004, 25(12): 2349.

References

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