A Study of CuTsPc Molecular Film/SiO2/Si Interfacial Charge Transfer Mechanism

Abstract

Abstract: In this paper,two layers of lipid-free copper tetrasulfonatophthalocyanine(CuTsPc) molecular films were deposited on the surface of p-Si wafers on which the oxided layers with different thickness.Time resolved surface photovoltage technique was used to study the mechanism of the electron transfer process of this system.The samples show the behavior of photo-electronic switch.The results prove that time resolved photovoltage technique is very useful to the study of the interfacial charge transfer process.

Key words: Photovoltage, Charge transfer, Photo-electronic switch

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JIANG Lei, Liu Wang, Wang De-Jun, Li Tie-Jin, Bai Yu-Bai, HAN Li, FEI Hao-Sheng. A Study of CuTsPc Molecular Film/SiO₂/Si Interfacial Charge Transfer Mechanism[J]. Chem. J. Chinese Universities, 1992, 13(8): 1098.

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A Study of CuTsPc Molecular Film/SiO₂/Si Interfacial Charge Transfer Mechanism

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