Chem. J. Chinese Universities ›› 1991, Vol. 12 ›› Issue (2): 265.

• Articles • Previous Articles     Next Articles

Studies on Deposition of Silicon Film by Laser-Plasma-Induced Dissociation of SiCl4

Zhang Jie1, Zhang Chang-yan1, Lin En-hui1, Li Yan-ling1, Qiu Ming-xin2, Lu Xue-biao2   

  1. 1. Institute of Chemistry, Northwest Normal University, Lanzhou, 730070;
    2. Shanghai Institute of Laser Technology, Shanghai
  • Received:1989-07-07 Online:1991-02-24 Published:1991-02-24

Abstract: Silicon film was first deposited on a quartz substrate by laser-plasma-induced dissociation of SiCl4. The characteristics of the film obtained is compared with that from laser deposition of SiH4in some references.

Key words: Laser chemical vapor deposition (LCVD), Plasma, Silicon tetrachloride, Silicon film

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