高等学校化学学报

高等学校化学学报

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金属有机化学气相沉积法制备SnO2/MCM-41半导体传感器及其性能研究

刘秀丽1, 高国华1, KAWI Sibudjing2   

    1. 上海市绿色化学与化工过程绿色化重点实验室, 华东师范大学化学系, 上海 200062;
    2. Department of Chemical and Environmental Engineering, National University of Singapore, Singapore 119260
  • 收稿日期:2007-01-29 修回日期:1900-01-01 出版日期:2007-09-10 发布日期:2007-09-10
  • 通讯作者: 高国华

Preparation of SnO2/MCM-41 Semiconducter Sensors with MOCVD and Their Properties

LIU Xiu-Li1, GAO Guo-Hua1*, KAWI Sibudjing2   

    1. Shanghai Key Laboratory of Green Chemistry and Chemical Process, Department of Chemistry, East China Normal University, Shanghai 200062, China;
    2. Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore 119260, Singapore
  • Received:2007-01-29 Revised:1900-01-01 Online:2007-09-10 Published:2007-09-10
  • Contact: GAO Guo-Hua

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摘要： 采用金属有机化学气相沉积(MOCVD)法制备了SnO2/MCM-41半导体传感器, 考察了沉积时间和沉积温度对SnO2/MCM-41半导体传感器的SnO2沉积量、比表面积和孔径的影响; 研究发现, 随着SnO2沉积量的增加, 孔径有规律地下降, 说明SnO2较均匀地沉积在介孔分子筛MCM-41的孔道之中. SnO2/MCM-41半导体传感器对CO和H2具有较高的传感性能, 其传感性能的大小与CO和H2的浓度成正比.

关键词: 半导体传感器, 介孔分子筛(MCM-41), 金属有机化学气相沉积(MOCVD), 二氧化锡, 薄膜

Abstract: SnO2/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition(MOCVD). The amount of deposition, specific surface area and pore distribution of SnO2/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO2 is coated smoothly in the pore of MCM-41. SnO2/MCM-41 sensor has high sensitivities for CO and H2. The sensitivities show a linear relation with the concentration of CO and H2.

Key words: Semiconductor sensor, MCM-41, MOCVD, Tin dioxide, Thin film

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