高等学校化学学报

高等学校化学学报 ›› 2011, Vol. 32 ›› Issue (12): 2717.

• 研究论文 • 上一篇    下一篇

金属有机化学气相沉积法制备ZnO和ZnO:Ni薄膜及其特性分析

王辉1,3, 王瑾1, 赵洋1, 赵龙1, 赵旺1, 史志锋1, 夏晓川2, 马艳1, 杜国同1,2, 董鑫1   

  1. 1. 集成光电子学国家重点联合实验室, 吉林大学电子科学与工程学院, 长春130012;
    2. 大连理工大学物理与光电工程学院, 大连 116024;
    3. 河南科技大学物理与工程学院, 洛阳 471003
  • 收稿日期:2011-08-04 修回日期:2011-09-04 出版日期:2011-12-10 发布日期:2011-11-25
  • 通讯作者: 董鑫 E-mail:dongx@jlu.edu.cn
  • 基金资助:

    国家自然科学基金(批准号: 61006006, 60877020, 60976010)资助.

MOCVD Preparation and Properties of ZnO and Ni\|doped ZnO Films

WANG Hui1,3, WANG Jin1, ZHAO Yang1, ZHAO Long1, ZHAO Wang1, SHI Zhi-Feng1, XIA Xiao-Chuan1, MA Yan1 , DU Guo-Tong1,2, DONG Xin1*   

  1. 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
    2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;
    3. College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003, China
  • Received:2011-08-04 Revised:2011-09-04 Online:2011-12-10 Published:2011-11-25
  • Contact: DONG Xin E-mail:dongx@jlu.edu.cn
  • Supported by:

    国家自然科学基金(批准号: 61006006, 60877020, 60976010)资助.

PDF (PC)

被引次数

6

摘要： 采用金属有机化学气相沉积法制备了ZnO和ZnO:Ni薄膜, 并对它们的结构、光学和电学特性进行了对比研究. 通过扫描电子显微镜(SEM)和X射线衍射(XRD)对薄膜的表面形貌和晶体结构进行了分析, 结果表明, Ni元素的掺杂虽然降低了薄膜的晶体质量, 但并未改变ZnO的纤锌矿结构. 通过紫外-可见分光光度计对薄膜的光学特性进行了测试与分析, 结果表明, ZnO:Ni薄膜在可见光区的平均透过率可达90%, 优于ZnO薄膜在可见光区的平均透过率(85%). 霍尔(Hall)测试显示ZnO:Ni薄膜的导电类型仍为n型, 但其电阻率已经明显增加, 载流子浓度也远低于未掺杂ZnO薄膜的载流子浓度, 说明Ni元素的掺杂对ZnO薄膜的特性产生了很大影响.

关键词: ZnO薄膜, ZnO:Ni薄膜, 金属有机化学气相沉积, 透过率

Abstract: ZnO and ZnO:Ni films were prepared by metal organic chemical vapor deposition method, and their structure and physical properties were studied. The surface morphologies and crystal structures of the films were analyzed by scanning electron microscope(SEM) and X-ray diffraction(XRD) technique. The results showed that doped Ni can affect the surface morphology and the crystal structure of the ZnO film greatly. The optical characteristic was performed by UV-Vis spectrophotometer. Average transmittance of the ZnO:Ni film was determined to be about 90% in the visible region, which is larger than that(85%)of the undoped ZnO film. The electrical characteristics were performed by Hall system. Resistivity of the ZnO:Ni film was larger than that of the undoped ZnO film. Carrier concentration of the ZnO:Ni film was much less than that of the undoped ZnO film.It was resulted from that Ni reduces the intrinsic donor defect concentration of ZnO film, and this avoids the strong self-compensate effect. Therefore, it is easier to acquire the p-type film by this way.

Key words: ZnO film, ZnO:Ni film, Metal organic chemical vapor deposition(MOCVD), Transmittance

TrendMD: