高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (8): 1400.

• 研究论文 • 上一篇    下一篇

Pb在锗酸镉基质中的长余辉发光特性

易守军1,2, 刘应亮1, 张静娴1, 袁定胜1   

  1. 1. 暨南大学化学系, 广州510632;
    2. 湖南科技大学化学学院, 湘潭411201
  • 收稿日期:2003-08-19 出版日期:2004-08-24 发布日期:2004-08-24
  • 基金资助:

    国家自然科学基金(批准号:59982003,20171018);广东省自然科学基金(批准号36706,013201)资助

Long Phosphorescence Persistence Property of Cd2Ge7O16:Pb2+

YI Shou-Jun1,2, LIU Ying-Liang1, ZHANG Jing-Xian1, YUAN Ding-Sheng1   

  1. 1. Department of Chemistry, Jinan University, Guangzhou 510632, China;
    2. College of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China
  • Received:2003-08-19 Online:2004-08-24 Published:2004-08-24

摘要: 通过高温固相反应在空气中制得单相Cd2Ge7O16:Pb2+长余辉发光材料.分析了Cd2Ge7O16和Cd2Ge7O16:Pb2+的激发光谱和发射光谱,指出Pb2+的发光是该离子的3P1-1S0跃迁产生的;分析了Cd2Ge7O16:Pb2+的发光存在基质对Pb2+的能量传递;并把长余辉性质归结为基质中Cd离子的挥发产生的空穴陷阱.提出了长余辉发光机理模型.

关键词: Cd2Ge7O16:Pb2+, 发光, 长余辉, 能量传递

Abstract: Cd2Ge 7O16 :Pb2+ was prepared by the high temperature solid state method. The material is a single phase. From the emission spectra and excitation spectra of Cd2Ge7O16:Pb2+ and Cd 2Ge 7O 16,it can be seen that the luminescence of Cd2Ge7O16:Pb2+ is due to the 3 P 1- 1 S 0 transitions of Pb2+ ions, the peak at 497 nm of Cd2Ge7O16:Pb2+ doped with 2%Pb2+ in molar fraction is the best, and the host Cd2Ge7O16can transfer energy to Pb2+ . Long afterglow property of Cd2Ge7O16:Pb2+ is due to the hole trap of Cd2Ge7O16:Pb2+ and the hole trap can trap hole,so afterglow luminescence appears. A mode of afterglow mechanism was proposed.

Key words: Cd2Ge7O16, Luminescence, Long afterglow, Energy transfer

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