高等学校化学学报

高等学校化学学报 ›› 2002, Vol. 23 ›› Issue (3): 432.

• 研究论文 • 上一篇    下一篇

PANI的内光电发射

黄怀国1, 罗瑾2, 张红平2, 吴玲玲2, 林仲华2   

  1. 1. 厦门紫金科技股份有限公司, 福建紫金矿冶研究院, 福建紫金矿业股份有限公司, 上杭 364200;
    2. 厦门大学固体表面物理化学国家重点实验室, 化学系, 物理化学研究所, 厦门 361005
  • 收稿日期:2000-03-22 出版日期:2002-03-24 发布日期:2002-03-24
  • 通讯作者: 林仲华(1941年出生),男,教授,博士生导师,从事电化学研究.E-mail:zhlin@xmu.edu.cn E-mail:zhlin@xmu.edu.cn
  • 基金资助:

    国家自然科学基金(批准号:29833060;20173044;20023001);教育部科技研究项目(批准号:99177)资助

Internal Photoemission in Polyaniline

HUANG Huai-Guo1, LUO Jin2, ZHANG Hong-Ping2, WU Ling-Ling2, LIN Zhong-Hua2   

  1. 1. Xiamen Zijin Science and Technology Co.Ltd., Fujian Zijin Research Institute of Mining and Matallurgy, Fujian Zijin Mining Industry Co.Ltd., Shanghand 364200, China;
    2. State Key Laboratory for Physical Chemistry of the Solid Surface, Department of Chemistry, Institute of Physical Chemistry, Xiamen University, Xiamen 361005, China
  • Received:2000-03-22 Online:2002-03-24 Published:2002-03-24

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被引次数

13

摘要： 利用电化学方法在自组装一层对氨基硫醇(PATP)的金电极上制备三种氧化还原态的聚苯胺(PANI)膜.PANI膜底层比较致密,表面呈山包状,该膜在K3Fe(CN)6/K4Fe(CN)6溶液的循环伏安图表明了部分氧化态PANI膜具有良好的电子传输性能.从光电流谱得到氧化态PANI的禁带能为1.45eV.首次发现部分氧化态PANI膜的光电流谱遵循Fowler定律(IPCE1/2～hν呈线性),具有内光电发射的性质.通过Fowler图得出部分氧化态PANI的绝缘母体的禁带宽度为3.33eV,并且证实该绝缘母体为还原态PANI.从Mott-Schottky图得到部分氧化态和还原态PANI的平带电位都为0.63V(vs.SCE).提出了和PANI的颗粒金属岛导电模型一致的内光电发射机理来解释部分氧化态PANI的光电化学过程.

关键词: 聚苯胺, 光电化学, 内光电发射

Abstract: After self-assembling a p-aminothiophenol(PATP) monolayer on bare Au electrode, polyaniline(PANI) films were prepared by electropolymerization on the modified Au electrode and three forms of PANI(reduced PANI, partially-oxidized PANI and oxidized PANI) were obtained by electrochemical method. The SEM pattern shows that there are some hills of PANIon a compact layer of PANI. The cyclic votammograms of the probe[K3Fe(CN)6/K4Fe(CN)6] for the three forms of PANI film show that partially-oxidized PANI has a good electron transport performance. The potential dependence of magnitude and spectra of the photocurrent of PANIfilms were observed. The bandgap energy of 1.45 eV for oxidized PANI, which is the threshold energy of its photocurrent spectra, was obtained. The spectra of photocurrent for partiallyoxidized PANI film shows that it has the characteristics of sub-band gap photocurrent spectra and follows Fowler rule(IPCE1/2～hν). The bandgap energy of insulating matrix in partially-oxidized PANIis determined as 3.33 eVby the Flowler plots, and the insulating matrix in partially-oxidized PANIis verified to be reduced PANI. The flatband potential, in the order of 0.63 V vs. SCE, is obtained from Mott-Schottky plots. Aphotoelectrochemical process based on internal photoemission in partially-oxidized PANI, which agrees with the model of granular metal island that assumes metallic polymer particles are embedded in the insulating matrix, is proposed.

Key words: Polyaniline, Photoelectrochemistry, Internal photoemission

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