高等学校化学学报 ›› 2001, Vol. 22 ›› Issue (11): 1781.

• 研究论文 •    下一篇

8-羟基喹啉镧两亲性配合物LB膜的双层电致发光器件

欧阳健明1, 林伟汉1, 黄春辉2, 张立东3, 李永航4, 杨春和4   

  1. 1. 暨南大学化学系, 广州 510632;
    2. 北京大学稀土材料化学及应用国家重点实验室, 北京 100871;
    3. 广州邮电通信设备有限公司, 广州 510630;
    4. 中国科学院北京化学研究所有机固体开放实验室, 北京 100080
  • 收稿日期:2000-08-09 出版日期:2001-11-24 发布日期:2001-11-24
  • 通讯作者: 欧阳健明(1963年出生),男,博士,教授,从事纳米材料和生物矿化研究.
  • 基金资助:

    广东省自然科学基金(批准号:970635);北京大学稀土材料化学及应用国家重点实验室开放基金资助课题

Bilayer Electroluminescent Devices of Langmuir-Blodgett Films of Amphiphilic Complex Derivated from 8-Hydroxyquinoline Lanthanum

OUYANG Jian-Ming1, LIN Wei-Han1, HUANG Chun-Hui2, ZHANG Li-Dong3, LI Yong-Hang4, YANG Chun-He4   

  1. 1. Departmentof Chemistry, Jinan University, Guangzhou 510632, China;
    2. State Key Labof Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871, China;
    3. Guangzhou Post&Telecom Equipment Ltd., Guangzhou 510630, China;
    4. Laboratory of Organic Solids, Institute of Chemistry, Chinese Academyof Sciences, Beijing 100080, China
  • Received:2000-08-09 Online:2001-11-24 Published:2001-11-24

摘要: 以具有不同层数的两亲配合物二[2-(N-十六烷基氨基甲酰基)-8-羟基喹啉]合镧[La(HQ)2Cl]的LB膜为发光层,PBD为电子传输层,制备了双层结构的电致发光(EL)器件:ITO/LB膜/PBD/Al.器件产生黄绿色注入式发光.LB膜的层数和沉积压对器件的性能具有重要影响.在16V激发电压下,5,11和21层LB膜双层EL器件的电流密度分别为48,29和16.4mA/cm2,启亮电压阀值为7.5,8.5和9.5V.器件的亮度随电流密度和驱动电压的增加而增加.在相同偏压下,21层LB膜EL器件的亮度大于5和11层LB膜的器件.在25mN/m沉积的LB膜制备的EL器件具有较高的亮度(1219cd/m2)和击穿电压.

关键词: 电致发光器件, LB膜, 双层器件

Abstract: Organic electroluminescent (EL) devices with a bilayer structure (ITO/LBfilm/PBD/Al) were fabricated with an Langmuir Blodgett (LB) film of amphiphilic complex bis[ Nhexadecyl 8-hydroxy-2-quinoline carboxamide] lanthanum[La(HQ)2Cl] as the emitting material. Excellent performance of the ELdevices originates from the insertion of an electron transport layer between the electrode and the emitting layer. Greenish yellow ELemission with a luminance of about 1219cd/m2 was observed with a low voltage drive(7.5 V). The number of the layers of LBfilms and the deposited surface pressure have a strong influence on the I-Vcharacteristics, ELintensity, as well as break down voltage of the ELdevices. When the LBfilms were prepared at the surface pressure of 25 mN/m, the current density crossing this kind of diodes had stronger nonlinear I-Vcharacteristics and the organic ELdevice had a higher ELintensity than another device prepared at lower surface pressure(5 and 15 mN/m). At a lower surface pressure, there may be some point defects or pinholes in the LBfilm, in which the high tunnel current would increase exponentially with the field, leading to an increase in the current density crossing the ELdevice and a decrease in the recombination probability of electrons and holes at a higher voltage.

Key words: Electroluminescent device, Langmuir Blodgett film, Bilayer devices

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