高等学校化学学报

高等学校化学学报 ›› 1996, Vol. 17 ›› Issue (6): 838.

• 论文 • 上一篇    下一篇

化学气相淀积法合成氮化铝薄膜及其工艺设计

谢松, 刘希, 孟广耀   

  1. 中国科学技术大学材料科学与工程系, 合肥 230026
  • 收稿日期:1995-06-22 出版日期:1996-06-24 发布日期:1996-06-24
  • 通讯作者: 孟广耀
  • 作者简介:谢松,男,24岁,硕士研究生.
  • 基金资助:

    国家自然科学基金

A Technical Design and Experiment of the Chemical Vapor Deposition of AIN Film

XIE Song, LIU Xi, MENG Guang-Yao   

  1. Department of Materials Science and Engineering, University of Science andTechnology of China, Hefei 230026
  • Received:1995-06-22 Online:1996-06-24 Published:1996-06-24

PDF (PC)

被引次数

1

摘要： 对AIBr3-NH3N2体系化学气相淀积法合成AIN膜进行了热力学分析和工艺设计,研究了在不同淀积温度和体系总压时,体系中主要气态物种的平衡分压和AIN膜的理论淀积速率与源温和载气流量的关系,并与微波等离子体化学气相淀积AIN膜的实验结果进行了比较。

关键词: 化学气相淀积, 氮化铝, 热力学分析

Abstract: Thermodynamic analysis and a technical design and experimental results for the chemical vapor deposition(CVD) of AINfilm from AIBr3-NH3-N2 system are presented.At various deposition temperatures,input gas flow rates and total pressure,the equilibrium partial pressures of the major gaseous species are calculated.The effects of precursor temperature and gas flow rate on the theoretical deposition rate of AINfilm are estimated.And theoretical results are compared with those of the experiments by a microwave plasma CVDof AINthin films.

Key words: Chemical vapor deposition, AIN, Thermodynamic analysis

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