Synthesis of InSe Nanoflakes with Near-infrared Photoresponse Grown by Chemical Vapor Deposition †

doi:10.7503/cjcu20190662

Abstract

Abstract:

With a graphene-like two-dimensional(2D) layered structure, InSe has a great potential in the application of electronics and optoelectronic devices. Herein, 2D InSe nanoflakes were synthesized via a chemical vapor deposition(CVD) method, and the effect of growth temperature on the crystalline phase, morphology, size and thickness of 2D InSe nanoflakes were studied. Photodetectors based on the as-synthesized 2D InSe nanoflakes were fabricated and its photodetection performance were studied. Under the illumination wavelength of 808 nm, the as-fabricated InSe photodetector exhibited a good near-infrared(NIR) photo-response, showing a photoresponsivity of 1.5 A/W, an external quantum efficiency of 230% and a detectivity of 3.1×10 ⁸ Jones, accompanied with a rise and decay time of 0.5 and 0.8 s, respectively, providing a good prospects for its practical application in NIR photodetectors.

Key words: Two-dimensional material, InSe, Chemical vapor deposition, Near-infrared photodetector

CLC Number:

O614.37

TrendMD:

HUANG Wenjuan, HOU Huayi, CHEN Xiangbai, ZHAI Tianyou. Synthesis of InSe Nanoflakes with Near-infrared Photoresponse Grown by Chemical Vapor Deposition ^†[J]. Chem. J. Chinese Universities, 2020, 41(4): 682.

Figures/Tables 7

Fig.1 Synthesis of InSe nanoflakes by space-confined CVD method(A) and chemical structure of InSe on mica substrate(B)

Fig.2 Optical images of samples on mica substrate obtained at different temperatures of 580(A), 590(B), 600(C), 610(D), 620(E) and 650 ℃(F)

Fig.3 Correlation of average flake sizes and thickness with growth temperature(A), AFM height image of a typical InSe flake obtained at 600 ℃(B) and Raman spectra(C) of the samples of Fig.2 (A) The vertical error bars indicate standard deviations of the flake sizes and thickness in statistical analysis. (C) a. 580 ℃; b. 590 ℃; c. 600 ℃; d. 610 ℃; e. 620 ℃; f. 650 ℃.

Fig.4 Schematic image of the photodetector(A) and spectral response curve(B) of the InSe nanoflake, I-V characteristics(C) of the device in the dark and under light illumination with different wavelengths at Vbias=1 VInset of (B): an optical image of the device.

Fig.5 I-V characteristics(A) of the device in the dark and time-resolved photoresponse of the device(B) under 808 nm NIR light illumination with different power intensities at Vbias=1 V corresponding fitting curve of photocurrent versus incident light intensities by power law(C)

Material	λ/nm	V_bias/V	R_λ/(A·W^-1)	EQE(%)	D^*/Jones	Time/(rise/decay)	Ref.
BP-ME	808	0.2	<4.89×10^-3				[37]
MoS₂-ME	850		9×10^-5		5×10⁷		[38]
In₂Se₃-CVD	850	1	ca. 0.5	18			[39]
Ta₂NiSe₅-ME	808	0.1	17.21	2645		3.0/3.3	[40]
SnSe₂-CVD	800	1	1.9				[41]
ReSe₂-CVD	808	5	2.98	458		5.47/8.41	[36]
InSe-ME	850	5	ca. 3×10³		ca. 10¹²		[20]
InSe-CVD	808	1	1.5	230	3.1×10⁸	0.5/0.8	This work

Fig.6 Time-resolved photoresponse of the device(A) and rise and decay curves measured using an oscilloscope and fitted with a single-exponential function(B) under 808 nm excitation at Vbias= 1 V

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