Preparation and Properties of Nanoscale p-Si@Cu(x)†

doi:10.7503/cjcu20160765

Abstract

Abstract:

Nanoscale p-Si@Cu(x)(x stands for the cladding amount of copper) was prepared by Stöber method and magnesiothermic reduction method. The morphologies and structures of p-Si@Cu(x) alloy were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM)、 transmission electron microscopy(TEM) and specific surface area analysis, and the cyclic performance and rate performace of the material were investigated. The results show that the first discharge and charge capacity of p-Si@Cu(0.05) are 3596.9 and 2590.7 mA·h/g, respectively at 100 mA/g and the first coulomb efficiency is 72.03%; its cell cycle stability and rate performance of p-Si@Cu(0.05) are also the best, the reversible capacity is 1004.9 mA·h/g at 1C. The reversible capacity is 1706.5 mA·h/g at 0.1C after 100 times cycling and the capacity remaining rate is 76.1%.

Key words: Lithium-ion battery, Porous silicon material, Copper cladding

CLC Number:

O646

TrendMD:

YU Zhihui, LIU Dandan, KOU Yanna, XIA Dingguo. Preparation and Properties of Nanoscale p-Si@Cu(x)^†[J]. Chem. J. Chinese Universities, 2017, 38(5): 837.

Figures/Tables 14

Scheme 1 Schematic diagram of the fabrication of p-Si@Cu

Fig.1 XRD patterns of SiO2@CuO(x) with different Cu contents a. SiO2@CuO(0.033); b. SiO2@CuO(0.05);c. SiO2@CuO(0.1); d. SiO2@CuO(0.2).

Fig.2 SEM images of SiO2(A), SiO2@CuO(0.05)(B) and SiO2@CuO(0.2)(C)

Fig.3 Energy spectra for SiO2@CuO(0.05)(A) and SiO2@CuO(0.2)(B)

Fig.4 TEM images of precursor sphere SiO2@CuO(0.05)

Fig.5 XRD patterns(A) and partial enlarged detail(B) for p-Si@Cu(x)a. Si@CuO(0.033); b. Si@CuO(0.05); c. Si@CuO(0.1); d. Si@CuO(0.2).

Fig.6 High resolution TEM images of p-Si(A) and p-Si@Cu(0.05)(B)Insets are the corresponding panorama of the two samples.

Fig.7 Nitrogen adsorption/desorption isotherms(A) and distribution of pore size(B) for p-Si@Cu(x)

Fig.8 Discharge/charge curves of p-Si@Cu(x)(A) p-Si; (B) p-Si@Cu(0.033); (C) p-Si@Cu(0.05); (D) p-Si@Cu(0.1); (E) p-Si@Cu(0.2).

Fig.9 Cyclic voltammogram of p-Si@Cu(0.05)

Fig.10 The first cyclic voltammograms of p-Si(a) and p-Si@Cu(0.05)(b)

Fig.11 Cyclic performance(A) and coulombic efficiency(B) of p-Si@Cu(x) at current density of 420 mA/g

Fig.12 Rate performances of p-Si@Cu(x)

Table 1 Rate performance of samples p-Si, p-Si@Cu(0.033), p-Si@Cu(0.05), p-Si@Cu(0.1) and p-Si@Cu(0.2)

Sample	Reversible capacity/(mA·h·g^-1)
Sample	100 mA/g	0.1C	0.5C	1C	100 mA/g
p-Si	1888.8	1655.6	1006.6	683.2	1565.5
p-Si@Cu(0.033)	2138.8	1905.6	1256.6	783.2	1815.5
p-Si@Cu(0.05)	2456.6	2047.8	1494.3	1004.9	2078.9
p-Si@Cu(0.1)	1329.6	1131.6	921.4	656.5	972.4
p-Si@Cu(0.2)	1002.7	805.8	603.1	395.8	664.8

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