Chem. J. Chinese Universities ›› 2011, Vol. 32 ›› Issue (12): 2833.

• Articles • Previous Articles     Next Articles

Preparation of Hydrophobic/Superhydrophobic Surface on Silicon Wafer by Reactive Ion Etching and Self-assembled Monolayers

LIAN Feng1*, ZHANG Hui-Chen1, ZOU He-Lin2, PANG Lian-Yun1   

  1. 1. Department of Mechanical Engineering, Dalian Maritime University, Dalian 116026, China;
    2.  School of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China
  • Received:2011-03-18 Revised:2011-06-08 Online:2011-12-10 Published:2011-11-25
  • Contact: LIAN Feng E-mail:fengfeng0425@yahoo.com.cn
  • Supported by:

    国家自然科学基金(批准号: 50975036)和辽宁省教育厅重点实验室(批准号: 2008S029)资助.

Abstract: Micro scale pillar arrays on silicon(100) wafer were generated by reactive ion etching.  Three self-assembled monolayers(SAMs) were prepared on etched silicon wafer by self-assembled technique.  The results show that four micro pillar arrays generated by reactive ion etching possess regular structures with diameter of 5 μm, height of 10 μm and spacing of 15—45 μm.  The water contact angles of silicon wafers increase significantly after SAMs deposition, in which maximum contact angle is abtained for 1H,1H,2H,2H-perfluorodecyltrichlorosilane(FDTS) deposition, medium for 1H,1H,2H,2H-perfluorooctyltrichlorosilane(FOTS) deposition and minimum for octadecyltrichlorosilane(OTS) deposition.  The measured contact angles larger than 150°  are close to the contact angles calculated with Cassei model.  However, the measured contact angles less than 150° approach the contact angles calculated with Wenzel model.  Contact angles can be controlled by adjusting spacing of pillar array and choosing different SAMs.  Atomic force microscope(AFM) measurement show that nano scale clusters on silicon wafers appear after SAMs deposition.  Maximum contact angle of 156.0° can be acquired in surface structure with micro pillar array and nano scale SAMs.

Key words: Superhydrophobicity, Contact angle, Reactive ion etching, Self-assembled monolayer

CLC Number: 

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