Chem. J. Chinese Universities ›› 2009, Vol. 30 ›› Issue (5): 971.

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Structure and Electrochemical Performance of Copper Doped Vanadium Oxide Thin Films Deposited by RF Magnetron Sputtering

ZHANG Liang-Tang1,5, SONG Jie2, CAI Min-Zhen3,5, XU Fu-Chun4, WU Sun-Tao5*, DONG Quan-Feng2*   

    1. Department of Mechanical and Electrical Engineering,
    2. College of Chemistry & Chemical Engineering,
    3. Department of Physics,
    4. Analysis and Testing Center,
    5. Pen Tung Sah MEMS Research Center, Xiamen University, Xiamen 361005, China
  • Received:2008-08-13 Online:2009-05-10 Published:2009-05-10
  • Contact: WU Sun-Tao, E-mail: wst@xmu.edu.cn; DONG Quan-Feng, E-mail: qfdong@xmu.edu.cn

Abstract:

V2O5 was used as cathode material for all solid state thin film lithium-ion batteries, so as to improve electrochemical properties of V2O5 thin film material. In this paper, copper doped and undoped vanadium oxide films were deposited on silicon substrates by RF magnetron sputtering. The films were characterized by XRD, SEM and XPS. The results show that undoped thin films are polycrystalline-V2O5 and copper doped thin films are amorphous copper-vanadium oxide. The Cu ions are at +2 oxidation state, while the V ions are mixed with +4 and +5 oxidation state. With increasing the concentration of doped Cu, the ratio of V4+/V5+ increases. The electrochemical tests show that doping copper contribute to increase the capacity of V2O5 films. The film with a composition of Cu2.1VO4.4 indicate highest capacity among all samples and is observed better cycleability, which is 83.4 μA·h·cm-2·μm-1 up to 100 cycles.

Key words: Copper-vanadium oxide, RF magnetron sputtering, Cathode material, Electrochemical property

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